Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs<sub>0.91</sub>Sb<sub>0.09</sub> alloy nBn photodetectors

Olson, B. V.; Kim, J. K.; Kadlec, Emil; Klem, John F.; Hawkins, Samuel D.; Leonhardt, Darin; Coon, W. T.; Fortune, Torben Ray; Cavaliere, M. A.; Tauke‐Pedretti, Anna; Shaner, Eric A.

doi:10.1063/1.4935159

Cited by 23 publications

(7 citation statements)

References 18 publications

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“…Antimony (Sb) based III-V semiconductors are considered as viable alternatives for the state-of-the-art technology [2][3][4][5][6][7][8][9][10][11][12] . Among them, InAs1-xSbx alloy has gained much interest due to their wide bandgap tunability by changing Sb composition [13][14][15][16] , with lattice matched condition to GaSb substrate when Sb composition is ~9% 1,17 . Over last decades, great efforts were devoted to the investigation of InAsSb based photodiode both in physics and applications.…”

Section: Introductionmentioning

confidence: 99%

High quality InAsSb-based heterostructure n-i-p mid-wavelength infrared photodiode

Tong

Tobing

et al. 2018

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

High quality InAsSb-based heterostructure n-i-p mid-wavelength infrared photodiode

Tong

Tobing

et al. 2018

Applied Surface Science

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“…Figure 5 (a) shows J-V characteristics of shallow mesa-type Mg2Si PD (ID = 400 μm) between 100 K and 350 K. The leakage current in reverse bias decreased rapidly with decreasing the temperature. The current density at -3 V reached to about 9 × 10 -4 A/cm 2 at 100 K. Figure 5 (b) shows an Arrhenius plot of the saturation current density at -1 V. The saturation current density aligned two slopes, indicating that the PD may work in generation limited condition above about 250 K [11,12].…”

Section: Resultsmentioning

confidence: 92%

Fabrication of Mg₂Si pn-junction photodiode with shallow mesa-structure and ring electrode

Akiyama¹,

Nobuhiko²,

Shuntaro³

et al. 2017

Proc. Asia-Pacific Conf. On Semiconducting Silicides and Related Materials 2016

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We fabricated Mg2Si pn-juncion photodiodes with a shallow mesa structure and a ring electrode using a conventional photolithography process and investigated their electrical and optical character. Dark current densities of about 0.18 and 9 × 10-4 A/cm 2 were obtained at room temperature and 100 K under the reverse bias at-3 V. Photoresponse below about 2.1 μm was observed in the shallow mesa-type PDs at room temperature operation. The photosensitivity at 1.31 μm was determined about 22 mA/W and 42 mA/W for the bias voltage at 0 and-0.1 V, respectively.

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“…However, the spatial offset of electron and hole wavefunctions in T2SL materials results in a reduced absorption coefficient, when compared to bulk materials [6]. Countering this reduced absorption requires thicker detectors, which, consequently, will increase detector dark current (noise) and reduce detector response times [7].…”

Section: Introductionmentioning

confidence: 99%

Room-Temperature Mid-Wave Infrared Guided-Mode Resonance Detectors

Kamboj

Nordin

Muhowski

et al. 2022

IEEE Photon. Technol. Lett.

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We demonstrate room temperature mid-wave infrared detectors with high peak detectivity. Our detector structures consist of type-II superlattice nBn detectors with ultra-thin (∼ 250 nm) absorbers, integrated into an all-epitaxial guidedmode resonance architecture. The resulting devices show strong spectral selectivity, controllable by choice of grating period, and low dark currents. We achieve room temperature peak specific detectivity of D * ≈ 1.2 × 10 10 cm √ Hz/W at a wavelength of λ = 4.4 µm and D * ≈ 1 × 10 10 cm √ Hz/W at a wavelength of λ = 4.7 µm, for grating periods of Λ = 1.6 µm and Λ = 1.8 µm, respectively. The presented all-epitaxial devices offer a unique approach to efficient room temperature mid-wave infrared detection with strong spectral and polarization selectivity.

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Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs_0.91Sb_0.09 alloy nBn photodetectors

Cited by 23 publications

References 18 publications

High quality InAsSb-based heterostructure n-i-p mid-wavelength infrared photodiode

High quality InAsSb-based heterostructure n-i-p mid-wavelength infrared photodiode

Fabrication of Mg₂Si pn-junction photodiode with shallow mesa-structure and ring electrode

Room-Temperature Mid-Wave Infrared Guided-Mode Resonance Detectors

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Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors

Cited by 23 publications

References 18 publications

High quality InAsSb-based heterostructure n-i-p mid-wavelength infrared photodiode

High quality InAsSb-based heterostructure n-i-p mid-wavelength infrared photodiode

Fabrication of Mg2Si pn-junction photodiode with shallow mesa-structure and ring electrode

Room-Temperature Mid-Wave Infrared Guided-Mode Resonance Detectors

Contact Info

Product

Resources

About

Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs_0.91Sb_0.09 alloy nBn photodetectors

Fabrication of Mg₂Si pn-junction photodiode with shallow mesa-structure and ring electrode