Minority Carrier Diffusion Length in Epitaxially Grown SiC(6H) pn Diodes

Anikin, M. M.; Lebedev, Alexander A.; Pyatko, S. N.; Soloviev, V. A.; Strel'chuk, Anatoly M.

doi:10.1007/978-3-642-84402-7_40

Cited by 6 publications

(7 citation statements)

References 3 publications

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“…In high-voltage bipolar devices, a long minority carrier lifetime is crucial to attain effective conductivity modulation and thereby reduced on-state power dissipation. Previous studies on the switching characteristics of SiC p-n junction diodes have shown very short minority carrier lifetimes in the range from 30-80 ns [12], [22], [23]. Recently, Neudeck has pointed out the possibility that perimeter recombination may be responsible for poor effective minority carrier lifetimes in 4H-SiC p -n diodes with breakdown voltages of a few hundreds volts [24].…”

Section: Carrier Lifetimementioning

confidence: 99%

Performance limiting surface defects in SiC epitaxial p-n junction diodes

Kimoto

Miyamoto

Matsunami

1999

IEEE Trans. Electron Devices

211

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Effects of surface defects on performance of kV-class 4H-and 6H-SiC epitaxial p-n junction diodes were investigated. The perimeter recombination and generation, instead of the bulk process, are responsible for forward recombination current and reverse leakage current of the diodes, respectively. Mapping studies of surface morphological defects have revealed that triangularshaped defects severely degrade high-blocking capability of the diodes whereas shallow round pits and scratch give no direct impact. Device-killing defects in SiC epilayers are discussed based on breakdown voltage mapping. Effective minority carrier lifetimes are mainly limited not by bulk recombination but by perimeter recombination.

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Section: Carrier Lifetimementioning

confidence: 99%

Performance limiting surface defects in SiC epitaxial p-n junction diodes

Kimoto

Miyamoto

Matsunami

1999

IEEE Trans. Electron Devices

211

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“…Sublimation epitaxy under vacuum (SEV) was investigated as a method for growing 4H-SiC epitaxial structures for microwave p-i-n diode fabrication as this method has exhibited specific advantages such as low process price, high growth rate and high radiation hardness in previous studies [4][5][6][7][11][12][13][14][15][16]. The SEV-grown 4H-SiC material was investigated with SEM and AFM, x-ray diffraction and topography, photo-and cathodo-luminescence spectroscopy, DLTS, C-V profiling, Hall-effect measurements and electroluminescence microscopy.…”

Section: Discussionmentioning

confidence: 99%

“…The holes diffusion length in a sublimation grown n-type epilayer (N d − N a ∼ 1.5 × 10 17 cm −3 ) was measured by the photocurrent method at room temperatures (figure 6). The principle of the method is to measure the photocurrent (I ph ) at different reverse bias (U r ) of pn structure [12]. It is well known that the thickness of the space-charge region W varies as √ U r .…”

Section: Electrical Characterization Of 4h-sic Sev-grown Epilayersmentioning

confidence: 99%

4H-SiC p–i–n diodes grown by sublimation epitaxy in vacuum (SEV) and their application as microwave diodes

Camara¹,

Zekentes²,

Zelenin³

et al. 2008

Semicond. Sci. Technol.

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Sublimation epitaxy under vacuum (SEV) was investigated as a method for growing 4H-SiC epitaxial structures for p-i-n diode fabrication. The SEV-grown 4H-SiC material was investigated with scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction, photo-luminescence spectroscopy (PL), cathodo-luminescence (CL) spectroscopy, photocurrent method for carrier diffusion length determination, electro-luminescence microscopy (EL), deep level transient spectroscopy (DLTS), C-V profiling and Hall-effect measurements. When possible, the same investigation techniques were used in parallel with similar layers grown by chemical vapour deposition (CVD) epitaxy and the physical properties of the two kind of epitaxied layers were compared. p-i-n diodes were fabricated in parallel on SEV and CVD-grown layers and showed close electrical performances in dc mode in term of capacitance, resistance and transient time switching, despite the lower mobility and the diffusion length of the SEV-grown layers. X-band microwave switches based on the SEV-grown p-i-n diodes have been demonstrated with insertion loss lower than 4 dB and an isolation higher than 17 dB. These single-pole single-throw (SPST) switches were able to handle a pulsed power up to 1800 W in isolation mode, similar to the value obtained with switches incorporating diodes with CVD-grown layers.

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“…The values of the recombination parameters (lifetime and diffusion length of nonequilibrium charge carriers) in silicon carbide (SiC) are of great interest for both theoretical and device design considerations. One of the first methods for measuring the diffusion length was to study the photocurrent characteristics of Schottky diodes and pn structures at room temperature (RT) [1,2], and in a wide temperature range 300-800 K [3]. Diffusion length was also determined by electron beam induced current (EBIC) [3,4].…”

Section: Introductionmentioning

confidence: 99%

“…One of the first methods for measuring the diffusion length was to study the photocurrent characteristics of Schottky diodes and pn structures at room temperature (RT) [1,2], and in a wide temperature range 300-800 K [3]. Diffusion length was also determined by electron beam induced current (EBIC) [3,4]. The lifetime was determined from transient current characteristics when diodes are switched from forward to reverse bias [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Recombination Processes in 4H-SiC pn Structures

Strel'chuk

Bérenguier

Yakimov

et al. 2016

MSF

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Commercial 4H-SiC p+n structures with an uncompensated donor concentration (Nd-Na) of ~1.5∙1015 cm-3 in the n-type epitaxial layer are studied. The measurement of the photocurrent, electron beam induced current and transient switching characteristics (from forward to reverse voltage), altogether showed that the value of the hole diffusion length, about 2 μm at room temperature, increases to at least 7 μm at 620 K.

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Minority Carrier Diffusion Length in Epitaxially Grown SiC(6H) pn Diodes

Cited by 6 publications

References 3 publications

Performance limiting surface defects in SiC epitaxial p-n junction diodes

Performance limiting surface defects in SiC epitaxial p-n junction diodes

4H-SiC p–i–n diodes grown by sublimation epitaxy in vacuum (SEV) and their application as microwave diodes

Recombination Processes in 4H-SiC pn Structures

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