Minority carrier diffusion length effects on light-addressable potentiometric sensor (LAPS) devices

Sartore, Marco; Adami, Maurice Zarb; Nicolini, Claudio; Bousse, L.; Mostarshed, Shahriar; Hafeman, Dean G.

doi:10.1016/0924-4247(92)80025-x

Cited by 58 publications

(40 citation statements)

References 14 publications

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“…In terms of experimental approach and substrate materials, SPIM is very closely related to Light Addressable Potentiometric Sensors (LAPS) and the Scanned Light Pulse Technique (SLPT) [7][8][9]. While SPIM detects photocurrent changes with a metal-insulator-semiconductor (MIS) or an electrolyte-insulator-semiconductor (EIS) structure biased towards inversion (saturation region of the photocurrent-voltage curve) to detect local changes in the impedance, LAPS and SLPT determine shifts of the current-voltage characteristic along the DC voltage axis at a bias near the flat band point to detect local changes in potential.…”

Section: Resolution Of Spimmentioning

confidence: 99%

Scanning Photo-Induced Impedance Microscopy—Resolution studies and polymer characterization

Krause

Moritz

Talabani

et al. 2006

Electrochimica Acta

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Scanning Photo-Induced Impedance Microscopy (SPIM) is an impedance imaging technique that is based on photocurrent measurements at field-effect structures. The material under investigation is deposited onto a semiconductor-insulator substrate. A thin metal film or an electrolyte solution with an immersed electrode serves as the gate contact. A modulated light beam focused into the space charge region of the semiconductor produces a photocurrent, which is directly related to the local impedance of the material. The absolute impedance of a polymer film can be measured by calibrating photocurrents using a known impedance in series with the sample.Depending on the wavelength of light used, charge carriers are not only generated in the focus but also throughout the bulk of the semiconductor. This can have adverse effects on the lateral resolution. Two-photon experiments were carried out to confine charge carrier generation to the space charge layer. The lateral resolution of SPIM is also limited by the lateral diffusion of charge carriers in the semiconductor. This problem can be solved by using thin silicon layers as semiconductor substrates. A resolution of better than 1 m was achieved using silicon on sapphire (SOS) substrates with a 1 m thick silicon layer.

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Section: Resolution Of Spimmentioning

confidence: 99%

Scanning Photo-Induced Impedance Microscopy—Resolution studies and polymer characterization

Krause

Moritz

Talabani

et al. 2006

Electrochimica Acta

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“…Their theoretical principles are discussed in detail in [1][2][3][4]. By measuring the photocurrent, which is induced by a light beam in an electrolyte-insulatorsemiconductor (EIS) structure, one can detect surface interactions between the sensor surface and the analyte due to the influence of the size of the space-charge region at the point of illumination.…”

Section: Introductionmentioning

confidence: 99%

“LAPS Card”—A novel chip card-based light-addressable potentiometric sensor (LAPS)

Wagner

Rao

Kloock

et al. 2006

Sensors and Actuators B: Chemical

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“…The spatial resolution determines the smallest size of structures that can be visualized by the chemical imaging sensor and it limits the density of measuring points on the multisensor surface. It has been demonstrated both experimentally and theoretically [11][12][13] that the spatial resolution is determined by the beam size and the lateral diffusion of photocarriers in the semiconductor layer. With appropriate focusing optics, the beam size can be reduced down to the scale of 1µm or the wavelength of the light.…”

Section: Introductionmentioning

confidence: 99%

Application of Thin-Film Amorphous Silicon to Chemical Imaging

et al. 2006

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A thin-film amorphous silicon (a-Si) deposited on a glass substrate was employed as a semiconductor material for the chemical imaging sensor, which can visualize the distribution of ion concentration in a solution. The sensing properties and the spatial resolution of the a-Si sensors were investigated. Nearly-Nernstian pH sensitivities and submicron resolution were demonstrated, which suggests the superior performance of the chemical imaging sensor based on thin-film a-Si.

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Minority carrier diffusion length effects on light-addressable potentiometric sensor (LAPS) devices

Cited by 58 publications

References 14 publications

Scanning Photo-Induced Impedance Microscopy—Resolution studies and polymer characterization

Scanning Photo-Induced Impedance Microscopy—Resolution studies and polymer characterization

“LAPS Card”—A novel chip card-based light-addressable potentiometric sensor (LAPS)

Application of Thin-Film Amorphous Silicon to Chemical Imaging

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