Minority-carrier diffusion coefficients in highly doped silicon

Abstract

Direct experimental determination of minority-carrier mobilities and corresponding diffusion coefficients in highly doped p- and n-type silicon have apparently not been performed until now. We have determined the minority-carrier diffusion coefficient in phosphorus- and boron-doped silicon (doping range 1017–1019 cm−3) at 300 K by measuring the complex diffusion length of minority carriers generated by 10.7-MHz optical excitation. Converted into mobilities by the Einstein relation, the results do not differ significantly from Irvin’s majority-carrier mobilities.

An improved formulation of the temperature dependence of the Gummel-Poon bipolar transistor model equations

“…For electrons, the comparable values for minority-and majority-carrier mobilities were experimentally found by Dziewior et al [30], Burk et al [31], and Neugroschel [32] within the doping range of 10 14 to 3.5 x 10 18 cm -3 at 300 K. Within high doping range, 10 19 to 10 20 cm -3, Swirhun et al [33] 44 indicated that the values of minority-carrier mobility are two and half times larger than those of the corresponding majority-carrier mobility. For holes, they [30,31,32] found that the minority-carrier mobilities are larger than the majority-carrier mobilities within the doping range of 10 14 to 10 19 cm -3. Within high doping range, 2 x 10 19 to 1.5 x 10 20 cm -3, Burk et al [31] and Neugroschel et al [34] discovered that the minority-carrier mobilities are less than the majority-carrier mobilities.…”

Comparison of Single Event Transients Generated by Short Pulsed X-Rays, Lasers and Heavy Ions

“…Using refs. [28]- [31], we find that the minority carrier mobility for n-type silicon is cm V s . This yields a diffusion coefficient cm s. Using the mean doping profile shown in Fig.…”

Doping-Type Dependence of Damage in Silicon Diodes Exposed to X-Ray, Proton, and He$^{+}$ Irradiations

“…This emphasizes the relative importance of the lightly doped side of the junction in the lifetime measurements described below. According to [9] and [10], given the moderate doping value of the samples it is reasonable to assume that, for both types of carrier, the minority carrier mobility does not depend on the substrate doping type. This allows estimation of the minority carrier diffusion length on the low-doped side of each junction: 320 m and 140 m. By comparing these values with sample geometry (Figs.…”