Minimizing Self-Heating and Heat Dissipation in Ultrascaled Nanowire Transistors

Rhyner, Reto; Luisier, Mathieu

doi:10.1021/acs.nanolett.5b04071

Cited by 43 publications

(30 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…It was demonstrated that the self‐heating effect is more dominant in the case of thinner individual nanostructures . The presence of a substrate under the nanostructure is also important because it leads to heat dissipation and decreases the local operating temperature …”

Section: Resultsmentioning

confidence: 99%

“…[43,44] The presence of a substrate under the nanostructure is also important because it leads to heat dissipation and decreases the local operating temperature. [45][46][47] Figure 4a shows the room temperature gas response of a ZnO: Al NW (20 μM) and a ZnO:Al NW (40 μM) to different concentrations of ethanol vapors (down to 50 ppm) in order to find out what concentration leads to a higher gas response. It can be observed that as in the case of UV response, the ZnO:Al NW (20 μM) possess a higher gas response to ethanol vapors Figure 4b shows the gas response to 1000 and 50 ppm of ethanol, 2-propanol, n-butanol, and ammonia vapors for ZnO:Al NW (20 μM), showing that a ZnO:Al NW can detect VOCs vapors even at much lower concentrations of VOCs (50 ppm).…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Al‐Doped ZnO Nanowires by Electrochemical Deposition for Selective VOC Nanosensor and Nanophotodetector

Pauporté

Lupan

Postica

et al. 2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

Nanomaterials for new nanosensor systems with selective detection of hazardous volatile organic compounds (VOCs) vapors are of great demand nowadays. In this paper, the use in nanosensors of electrochemically deposited (ECD) Al‐doped ZnO (ZnO:Al) nanowires (NWs) is reported. The NWs are characterized by micro‐Raman and optical measurements. Individual ZnO and ZnO:Al NWs are integrated into nanosensor devices for room temperature UV and gas sensing. It is shown that, compared to undoped ZnO NW with irreversible response, the doped ZnO:Al NWs have faster response (≈5 s) and recovery (≈55 s), as well as enhanced UV response (≈4.8, about 2 times higher). The room temperature gas sensing investigations demonstrate that an individual ZnO:Al NW can detect volatile organic compounds (VOCs) vapors such as 2‐propanol, n‐butanol and ethanol at room temperature with a relatively fast response time of ≈10 s and a reversible signal (the recovery time being 30–40 s). This shows the possibility to use it with further development as indoor air quality monitor.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Al‐Doped ZnO Nanowires by Electrochemical Deposition for Selective VOC Nanosensor and Nanophotodetector

Pauporté

Lupan

Postica

et al. 2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…The amount of dissipated power in a given component can be put in relation with the phonon-limited mobility µ ph of its underlying channel material 47 : the higher µ ph the less phonons are emitted and the less electrical power is converted into heat. To verify whether this statement is valid or not here, the phonon-limited electron mobility of single-layer MoS 2 , WS 2 , and AC black phosphorus, as computed with the "dR/dL" method 48 , is presented in Fig.…”

Section: Device Resultsmentioning

confidence: 99%

Ab-initio quantum transport simulation of self-heating in single-layer 2-D materials

Sue

Szabó

Bunjaku

et al. 2017

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Through advanced quantum mechanical simulations combining electron and phonon transport from first-principles self-heating effects are investigated in n-type transistors with a single-layer MoS 2 , WS 2 , and black phosphorus as channel materials. The selected 2-D crystals all exhibit different phonon-limited mobility values, as well as electron and phonon properties, which has a direct influence on the increase of their lattice temperature and on the power dissipated inside their channel as a function of the applied gate voltage and electrical current magnitude. This computational study reveals (i) that self-heating plays a much more important role in 2-D materials than in Si nanowires, (ii) that it could severely limit the performance of 2-D devices at high current densities, and (iii) that black phosphorus appears less sensitive to this phenomenon than transition metal dichalcogenides. a) mluisier@iis.ee.ethz.ch

show abstract

“…In order to validate the LOA + Padé approach, we use the 3D atomistic NEGF code OMEN [29,44,[51][52][53] in which a sp 3 d 5 s * TB model for electrons and a modified valence-force-field (VFF) method for phonons are implemented. OMEN is among the most sophisticated atomistic simulators of quantum transport of nano-devices.…”

Section: Applications To Electron and Phonon Transports In A Nanowirementioning

confidence: 99%

Quantum Treatment of Inelastic Interactions for the Modeling of Nanowire Field-Effect Transistors

et al. 2019

Self Cite

View full text Add to dashboard Cite

During the last decades, the Nonequilibrium Green's function (NEGF) formalism has been proposed to develop nano-scaled device-simulation tools since it is especially convenient to deal with open device systems on a quantum-mechanical base and allows the treatment of inelastic scattering. In particular, it is able to account for inelastic effects on the electronic and thermal current, originating from the interactions of electron-phonon and phonon-phonon, respectively. However, the treatment of inelastic mechanisms within the NEGF framework usually relies on a numerically expensive scheme, implementing the self-consistent Born approximation (SCBA). In this article, we review an alternative approach, the so-called Lowest Order Approximation (LOA), which is realized by a rescaling technique and coupled with Padé approximants, to efficiently model inelastic scattering in nanostructures. Its main advantage is to provide a numerically efficient and physically meaningful quantum treatment of scattering processes. This approach is successfully applied to the three-dimensional (3D) atomistic quantum transport OMEN code to study the impact of electron-phonon and anharmonic phonon-phonon scattering in nanowire field-effect transistors. A reduction of the computational time by about ×6 for the electronic current and ×2 for the thermal current calculation is obtained. We also review the possibility to apply the first-order Richardson extrapolation to the Padé N/N − 1 sequence in order to accelerate the convergence of divergent LOA series. More in general, the reviewed approach shows the potentiality to significantly and systematically lighten the computational burden associated to the atomistic quantum simulations of dissipative transport in realistic 3D systems.

show abstract

Minimizing Self-Heating and Heat Dissipation in Ultrascaled Nanowire Transistors

Cited by 43 publications

References 30 publications

Al‐Doped ZnO Nanowires by Electrochemical Deposition for Selective VOC Nanosensor and Nanophotodetector

Al‐Doped ZnO Nanowires by Electrochemical Deposition for Selective VOC Nanosensor and Nanophotodetector

Ab-initio quantum transport simulation of self-heating in single-layer 2-D materials

Quantum Treatment of Inelastic Interactions for the Modeling of Nanowire Field-Effect Transistors

Contact Info

Product

Resources

About