1979
DOI: 10.1109/jqe.1979.1069923
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Minimizing pattern effects in semiconductor lasers at high rate pulse modulation

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Cited by 19 publications
(2 citation statements)
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“…Qualitatively, this model shows good agreement with the real laser and can be used to find the optimum modulation condition in the gigabit per second range. The optimization is performed by finding the proper pulse current that after each pulse makes the density of excited electrons return as fast as possible to steady state, thereby, obtaining minimum pulse interaction [8], [12].…”
Section: Laser Modelmentioning
confidence: 99%
“…Qualitatively, this model shows good agreement with the real laser and can be used to find the optimum modulation condition in the gigabit per second range. The optimization is performed by finding the proper pulse current that after each pulse makes the density of excited electrons return as fast as possible to steady state, thereby, obtaining minimum pulse interaction [8], [12].…”
Section: Laser Modelmentioning
confidence: 99%
“…Gain switching semiconductor lasers is one technique that can be used to generate short, periodic pulses [1,2]. Several schemes for achieving pattern independence have been previously demonstrated [4,[6][7][8]. Pattern dependence can be eliminated by using a suitable modulation current waveform that ensures that the carrier density is the same at the beginning of each bit period, independent of the bit sequence [3][4][5].…”
Section: Introductionmentioning
confidence: 99%