2020
DOI: 10.1007/978-981-15-7486-3_36
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Minimization of Drain-End Leakage of a U-Shaped Gated Tunnel FET for Low Standby Power (LSTP) Application

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Cited by 2 publications
(1 citation statement)
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“…Today the tunneling effect is used to build a new element base of micro-, submicro-and nanoelectronics (in the nanostructures such as a field-effect transistor based on a quantum dot), various types of active semiconductor elements are being developed using thin-film technology where quantum effects are manifested along with tunneling [21,22]. It is known that the tunneling effect can be studied by examining the current-voltage characteristic (CVC) of a degenerate p-n junction of a tunnel diode.…”
Section: Experimental Unit For the Study Of The Tunnel Effectmentioning
confidence: 99%
“…Today the tunneling effect is used to build a new element base of micro-, submicro-and nanoelectronics (in the nanostructures such as a field-effect transistor based on a quantum dot), various types of active semiconductor elements are being developed using thin-film technology where quantum effects are manifested along with tunneling [21,22]. It is known that the tunneling effect can be studied by examining the current-voltage characteristic (CVC) of a degenerate p-n junction of a tunnel diode.…”
Section: Experimental Unit For the Study Of The Tunnel Effectmentioning
confidence: 99%