Miniaturized waveguide-integrated p-i-n photodetector with 120-GHz bandwidth and high responsivity

Beling, Andreas; Bach, H.-G.; Mekonnen, G.G.; Kunkel, R.; Schmidt, D.

doi:10.1109/lpt.2005.856370

Cited by 62 publications

(14 citation statements)

References 9 publications

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“…of Uni-Travelling Carrier (UTC) type [13,14]. Our setup employed photodiodes originally developed for high speed telecommunication at 1.5 μm [15,16]. Unlike the UTC types of [13,14], these devices have a standard P-I-N structure.…”

Section: Terahertz Emitter: Waveguide Integrated Photodiode Antenna (mentioning

confidence: 99%

Compact cw Terahertz Spectrometer Pumped at 1.5 μm Wavelength

Stanze

Deninger

Roggenbuck

et al. 2010

J Infrared Milli Terahz Waves

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A compact and low-cost continuous wave terahertz spectrometer operating at an optical wavelength of 1.5 μm is presented. The spectrometer employs high power distributed feedback (DFB) laser diodes in integrated "butterfly" packages. No further optical amplification of the beating signal is required. An integrated photodiode antenna with an output power of 5 μW at 500 GHz is used as efficient terahertz emitter. Employing low-temperature grown (LT-) InGaAs/InAlAs photoconductive receivers as coherent detectors, SNR values of the terahertz power up to 75 dB are attained at an integration time of 300 ms. Accurate characterization of the thermal tuning behavior of the DFBs and precise thermal control yield an absolute accuracy of 1 GHz and a resolution of better than 5 MHz, without any on-line monitoring of the optical frequency. Due to the high frequency resolution no delay line is needed to vary the terahertz phase.

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Section: Terahertz Emitter: Waveguide Integrated Photodiode Antenna (mentioning

confidence: 99%

Compact cw Terahertz Spectrometer Pumped at 1.5 μm Wavelength

Stanze

Deninger

Roggenbuck

et al. 2010

J Infrared Milli Terahz Waves

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“…For example submicron lithography is often required to fabricate the laterally tapered couplers [7]. Recently it has been shown that the critical taper technology can be replaced by exploiting mode-beating effects in coupled multimode waveguides [13][14][15][16][17]. Figure 3 shows a schematic of an evanescently coupled photodiode that utilizes a short multimode input waveguide with optical matching layers [14].…”

Section: A Optical Couplingmentioning

confidence: 99%

High-speed, waveguide photodiodes

Campbell

Beling

2008

2008 International Topical Meeting on Microwave Photonics Jointly Held With the 2008 Asia-Pacific Microwave Photonics Conferenc

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“…1 and 2) was integrated at the expense of half of the radio frequency (RF) photocurrent being lost. Details on the epitaxial layer stack and the fabrication process can be found in [5]. Using a cleaved fiber for the input, a responsivity of 0.24 A/W with a polarization dependent loss of only 0.2 dB was measured at 1.55 ptm wavelength.…”

mentioning

confidence: 99%

“…The InGaAs/InGaAsP heterostructure PDs with an intrinsic InGaAs absorption layer thickness of 200 nm were optimized to provide high responsivity [5]. A coplanar waveguide (CPW) transmission line connects the PDs in parallel and collects the electrical output signal.…”

mentioning

confidence: 99%

High-Frequency Performance of a High-Power Traveling Wave Photodetector with Parallel Optical Feed

Beling

Bach

Mekonnen

et al. 2007

2007 65th Annual Device Research Conference

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Fast photodetectors with large saturation photocurrent are key components in high-bit-rate fiber networks and photonic microwave applications incorporating optical pre-amplification. For high-speed operation, the photodetector has to be designed for low capacitance and small carrier transit times. These considerations lead to a reduced size of the photodiode (PD), which, however, results in less high-power handling capability and a lower saturation photocurrent. One way to overcome this trade-off between speed and saturation photocurrent is to distribute symmetrically the optical signal to several photodiodes and combine their photocurrents by means of a transmission line [1,2]. Now, due to the uniform optical power distribution, the unsaturated output photocurrent scales directly with the number of photodiodes. By embedding the discrete PDs within a transmission line, a traveling wave photodetector (TWPD) can be formed of which characteristic impedance can be matched to that of the external microwave circuit and a phase match between the propagating optical and electrical signals can be achieved [3]. Since the frequency response is not limited by the overall RC time constant the bandwidth of the single photodiode can be retained, to a large extent, within the Bragg limit.The studied traveling wave photodetector chip comprises a mode field converter for effective fiber-chip coupling [4] and a 1 x 4 multi-mode interference (MMI) power splitter (width: 43 ptm, length: 1038 ptm) of which output waveguides feed four p-i-n PDs, each with an active area of 4 x 7 ptm2. The InGaAs/InGaAsP heterostructure PDs with an intrinsic InGaAs absorption layer thickness of 200 nm were optimized to provide high responsivity [5]. A coplanar waveguide (CPW) transmission line connects the PDs in parallel and collects the electrical output signal.By choosing a CPW with an impedance of 85 Q and a spacing between adjacent PDs of d= 90 pm, an impedance match of the TWPD to the 50 Q-environment as well as a phase match were calculated. The electrical Bragg frequency was determined to be >200 GHz, which is sufficiently high to provide a smooth frequency response up to more than 100 GHz. In order to eliminate electrical reflections at the input of the transmission line a matching resistor (R50 in Figs. 1 and 2) was integrated at the expense of half of the radio frequency (RF) photocurrent being lost. Details on the epitaxial layer stack and the fabrication process can be found in [5]. Using a cleaved fiber for the input, a responsivity of 0.24 A/W with a polarization dependent loss of only 0.2 dB was measured at 1.55 ptm wavelength. In order to determine the characteristic impedance and the electrical phase velocity the four S-parameters were measured using a network analyzer and contacting both ends of the CPW within a TWPD without R50. At a bias voltage Vbias -3.5 V, an impedance match of >84 00 up to 50 GHz is found. The increase in the characteristic impedance with increasing reverse bias can be attributed to the decreasing p-n junction c...

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Miniaturized waveguide-integrated p-i-n photodetector with 120-GHz bandwidth and high responsivity

Cited by 62 publications

References 9 publications

Compact cw Terahertz Spectrometer Pumped at 1.5 μm Wavelength

Compact cw Terahertz Spectrometer Pumped at 1.5 μm Wavelength

High-speed, waveguide photodiodes

High-Frequency Performance of a High-Power Traveling Wave Photodetector with Parallel Optical Feed

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