Miniaturized Bandpass Filters as Ultrathin 3-D IPDs and Embedded Thinfilms in 3-D Glass Modules

Sitaraman, S.K.; Sukumaran, Vijay; Pulugurtha, Markondeya Raj; Wu, Zihan; Suzuki, Yuya; Kim, Youngwoo; Kim, Joungho; Tummala, Rao

doi:10.1109/tcpmt.2017.2708704

Cited by 26 publications

(12 citation statements)

References 8 publications

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“…Table 1 compares on-chip filters based on different processes with the proposed BPF, which provides higher performance with fewer metal layers than a low temperature co-fired ceramic BPF [8] or a glass IPD BPF [22]. The return loss above 20 dB of the proposed BPF indicates that almost no reflected signal occurs at the center frequency, and the best insertion loss was obtained among the compared BPFs [8,[21][22][23][24][25]. GaAs can provide better insulation and less signal loss than silicon substrate; in addition, the working power of GaAs is higher than glass [26].…”

Section: Discussionmentioning

confidence: 99%

A Highly Selective and Compact Bandpass Filter with a Circular Spiral Inductor and an Embedded Capacitor Structure Using an Integrated Passive Device Technology on a GaAs Substrate

et al. 2019

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As one of the most commonly used devices in microwave systems, bandpass filters (BPFs) directly affect the performance of these systems. Among the processes for manufacturing filters, integrated passive device (IPD) technology provides high practicality and accuracy. Thus, to comply with latest development trends, a resonator-based bandpass filter with a high selectivity and a compact size, fabricated on a gallium arsenide (GaAs) substrate is developed. An embedded capacitor is connected between the ends of two divisions in a circular spiral inductor, which is intertwined to reduce its size to 0.024 λ g × 0.013 λ g with minimal loss, and along with the capacitor, it generates a center frequency of 1.35 GHz. The strong coupling between the two ports of the filter results in high selectivity, to reduce noise interference. The insertion loss and return loss are 0.26 dB and 25.6 dB, respectively, thus facilitating accurate signal propagation. The filter was tested to verify its high performance in several aspects, and measurement results showed good agreement with the simulation results.

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Section: Discussionmentioning

confidence: 99%

A Highly Selective and Compact Bandpass Filter with a Circular Spiral Inductor and an Embedded Capacitor Structure Using an Integrated Passive Device Technology on a GaAs Substrate

et al. 2019

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“…The integrated passive device (IPD) process is a recent manufacturing technology that has been proposed as a solution for use in RF/microwave device fabrication. It provides simplified and compact modules with high performance through the integration of components with small parasitic effects [ 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 ].…”

Section: Introductionmentioning

confidence: 99%

A Multilayered GaAs IPD Resonator with Five Airbridges for Sensor System Application

Zhang,

Wang,

Chen

et al. 2024

Micromachines

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This work proposes a microwave resonator built from gallium arsenide using integrated passive device (IPD) technology. It consists of a three-layered interlaced spiral structure with airbridges and inner interdigital structures. For integrated systems, IPD technology demonstrated outstanding performance, robustness, and a tiny size at a low cost. The airbridges were made more compact, with overall dimensions of 1590 × 800 µm2 (0.038 × 0.019 λg2). The designed microwave resonator operated at 1.99 GHz with a return loss of 39 dB, an insertion loss of 0.07 dB, and a quality factor of 1.15. Additionally, an experiment was conducted on the properties of the airbridge and how they affected resistance, inductance, and S-parameters in the construction of the resonator. To investigate the impact of airbridges on the structure, E- and H-field distributions of the resonator were simulated. Furthermore, its use in sensing applications was explored. Various concentrations of glucose solutions were used in the experiment. The proposed device featured a minimum detectable concentration of 0.2 mg/mL; high sensitivity, namely, 14.58 MHz/mg·mL−1, with a linear response; and a short response time. Thus, this work proposes a structure that exhibits potential in integrated systems and real-time sensing systems with high sensitivity.

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“…Although acoustic-wave filters such as the ones based on surface acoustic wave (SAW) resonators and bulk acoustic (BAW) resonators have been the major RF filtering technology for cellular communications, they are limited to narrow-band single-band transfer functions and frequencies <2 GHz. Integrated passive devices (IPDs) based filters using silicon [1][2][3], microwave monolithic integrated circuits (MMIC) [4], or low-temperature co-fired ceramic (LTCC) [5,6] and glass substrates [7][8][9][10][11][12] functionalize significantly wider BWs, and are suitable for higher frequencies; however, they exhibit lower quality-factor than the SAW/BAW filters and are significantly larger in size. Among the existing IPD technologies, glass-based IPDs exhibit competitive RF performance for both FR1 [7][8][9][10][11] and FR2 [12] applications.…”

mentioning

confidence: 99%

“…Integrated passive devices (IPDs) based filters using silicon [1][2][3], microwave monolithic integrated circuits (MMIC) [4], or low-temperature co-fired ceramic (LTCC) [5,6] and glass substrates [7][8][9][10][11][12] functionalize significantly wider BWs, and are suitable for higher frequencies; however, they exhibit lower quality-factor than the SAW/BAW filters and are significantly larger in size. Among the existing IPD technologies, glass-based IPDs exhibit competitive RF performance for both FR1 [7][8][9][10][11] and FR2 [12] applications. Notable demonstrations of these trends include single-band quasi-elliptic bandpass filters (BPFs) for n77 and n79 bands [7,8] and inverter-less single and dual-band BPFs configurations in [10].…”

mentioning

confidence: 99%

“…Notable demonstrations of these trends include single-band quasi-elliptic bandpass filters (BPFs) for n77 and n79 bands [7,8] and inverter-less single and dual-band BPFs configurations in [10]. In yet another configuration, thin-film glass-based IPDs on both sides of glass substrates [9] have been demonstrated for the realization of small single BPFs, however with very limited selectivity. Overall, with the exception of the work in [10], all the existing IPD glass filtering concepts are single-band creating the need for multi-band configurations.…”

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confidence: 99%

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Multi‐band glass‐integrated bandpass filters for new radio (NR) communications

Webb

Psychogiou

2023

Electronics Letters

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A class of multi-band bandpass filters (BPFs) based on glass-integrated multi-resonant cells (MRCs) are reported. Each MRC comprises multiple in-parallel connected series-type resonators that create passbands in-between transmission zeros (TZs)-located at the resonators' resonance. The MRCs can be combined in multi-stage configurations to create high-order multi-band transfer functions or used in the RF input and output ports of a conventional transversal multi-band BPF to enhance its selectivity by adding poles and TZs without increasing its size. A compact integration concept using high-Q 3D integrated-passive devices (IPDs) is used for the realization of sub-6-GHz multi-band BPFs. For practical validation purposes: (1) a tri-band BPF with passbands centred at 1.58, 2.07, 2.83 Hz and fractional bandwidths (FBWs): 10.9, 9.06, 10% respectively and in-band insertion loss (IL) between 2 and 2.8 dB and (2) a dual-band BPF with passbands centred at 2 and 2.9 GHz with FBW 14.9% and 16.14% we manufactured and tested.

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Miniaturized Bandpass Filters as Ultrathin 3-D IPDs and Embedded Thinfilms in 3-D Glass Modules

Cited by 26 publications

References 8 publications

A Highly Selective and Compact Bandpass Filter with a Circular Spiral Inductor and an Embedded Capacitor Structure Using an Integrated Passive Device Technology on a GaAs Substrate

A Highly Selective and Compact Bandpass Filter with a Circular Spiral Inductor and an Embedded Capacitor Structure Using an Integrated Passive Device Technology on a GaAs Substrate

A Multilayered GaAs IPD Resonator with Five Airbridges for Sensor System Application

Multi‐band glass‐integrated bandpass filters for new radio (NR) communications

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