Millimeter-wave planar InP Schottky diodes and their small-signal equivalent circuit

Abstract

Ahstrucr-Two planar indium phosphide Schottky diode designs have been fabricated and analyzed for millimeter-wave detector applications up to 150 GHz. Device structure and fabrication are discussed and small-signal equivalent circuit models are presented. Ihe following topics are included: the planar InP diode structure fabricated by MeV ion implantation, dc and RF measurements, circuit model values, and 94 GHz small-signal detector performance. The zero-bias detector sensitivity at 94 GHz was measured to be as high as 400 mV/mW, and the calculated tangential signal sensitivity was-56 dBm.

A microwave equivalent circuit model for semiconductor alloy ramp heterostructure diodes

“…In this work we measure the microwave impedance of a rectifying semiconductor alloy ramp heterostructure, and extract a small-signal equivalent circuit model useful for high-frequency design over a wide range of temperature and dc bias. This dynamic impedance study is similar to previous ones for resonant tunneling heterostructures [ 11 and planar InP Schottky diodes [2]. The energy bandgap of the semiconductor is graded over several hundred nanometers in an AI,Ga,.…”

“…However, the mixing efficiency expression reported in [ 11 is complex if the received field and the LO SOPs are not linear. It can be written as the square cosine of an angle that, however, does not seem to have a physical meaning unless the fields are both linearly polarized [ 2 ] .…”

Broadband terahertz-wave detector implementing zero-biased InGaAsP Schottky-barrier diode

“…Figure 11. Comparison of reported voltage sensitivities of InP-based zero-biased SBD modules 8,9,[12][13][14][31][32][33] against operation frequency. Results of wideband (circle) and narrow band (triangle) devices are shown.…”

“…As a way to exploit the features of the SBD fully, operating the SBD under zero bias (i.e., zero-biased (unbiased) operation) is promising way to make the THz-wave system simpler, less expensive, and more energy efficient. For this purpose (i.e., zero-biased operation), InP and its related compounds have also been applied to SBDs, [8][9][10][11][12][13][14] since they have lower Schottky-barrier heights 15) that allow optimum operation near zero bias voltage. 16) As for detecting high-frequency electromagnetic waves, two approaches to guide the input signal to the SBD can be taken.…”

Microwave On-Wafer Characterization and Modelling of Schottky Barrier Diodes

“…Schottky diode models found in the literature [l]- [5] suffer lack of generality. For instance, Estreich's model [1] is valid in the forward-bias regime only and neglects the junction capacitance, other models [2]- [5] include bias independent equivalent series resistance only. Conventional techniques of the diode characterization and derivation of the diode intrinsic parameters are based on I-V and C-V measurements.…”