Millimeter-wave monolithic integrated circuit characterization by a picosecond optoelectronic technique

Hung, H.-L.A.; Polak‐Dingels, P.; Webb, Kevin J.; Smith, T.; Huang, H.C.; Lee, C.H.

doi:10.1109/22.31083

Cited by 34 publications

(2 citation statements)

References 10 publications

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“…This probe tip is sufficiently small that we may interrogate interconnects in many digital microwave circuits, even with features much smaller than 1 m. It should be mentioned that decreasing the probe tip width could easily increase the resolution further, or a fine conical tip can be employed to access the submicrometer regime [9]. To demonstrate the limit for the resolution of the current probe, a transmission line with a width of 5 m was used as a DUT.…”

Section: ) Spatial Resolutionmentioning

confidence: 99%

Absolute potential measurements inside microwave digital IC's using a micromachined photoconductive sampling probe

David

Yun

Crites

et al. 1998

IEEE Trans. Microwave Theory Techn.

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Abstract-A measurement system for internal node testing of integrated circuits using a micromachined photoconductive sampling probe is described and characterized. Special emphasis is placed upon the system performance, demonstrating how absolute voltage measurements are achieved in a dc-to-mm-wave bandwidth. The feasibility of the setup is illustrated using an InP heterojunction bipolar transistor frequency divider. Detailed waveforms at different circuit nodes and the corresponding propagation delays from within this circuit at operating frequencies up to 10 GHz are presented. The results demonstrate for the first time the use of photoconductive probes for calibration-free, absolute-voltage, dc-coupled potential measurements in highfrequency and high-speed integrated circuits.

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Section: ) Spatial Resolutionmentioning

confidence: 99%

Absolute potential measurements inside microwave digital IC's using a micromachined photoconductive sampling probe

David

Yun

Crites

et al. 1998

IEEE Trans. Microwave Theory Techn.

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“…The reflectometer design is based on a concept introduced by the author a few years ago [l]. It encompasses two features which set it apart from approaches reported previously in the literature [2]- [4]. The first such feature is the use of multiposition sampling.…”

Section: Introduction He Development Of Almost Any High-frequency mentioning

confidence: 99%

Optoelectronic approach to on-chip device and circuit characterization at microwave and millimeter-wave frequencies

Rauscher

1991

IEEE Trans. Microwave Theory Techn.

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Scattering parameter measurements performed on semiconductor chip devices and circuits critically depend on the predictability of high-frequency connections between chip and pertinent test equipment. This is of particular concern at high microwave frequencies, and even more so at millimeter wavelengths. The technique to be described here solves the problem through chip-level integration of measurement system front end and device or circuit under test. Arrays of high-speed photoconductive circuit elements, in conjunction with special compensation networks, are thereby utilized to implement, on chip, all signal generation and sampling functions needed to efficiently perform time-domain reflectometry. The acquired time-domain information is then converted into equivalent device-under-test scattering parameter responses. The practicability of the approach is experimentally demonstrated with the help of five individual test structures that are realized in monolithicintegrated-circuit format on a GaAs substrate and operate over a full, uninterrupted 100 GHz frequency interval.

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Progress of High-Speed Optoelectronics

Yen

1994

Advances in Integrated Optics

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Millimeter-wave monolithic integrated circuit characterization by a picosecond optoelectronic technique

Cited by 34 publications

References 10 publications

Absolute potential measurements inside microwave digital IC's using a micromachined photoconductive sampling probe

Absolute potential measurements inside microwave digital IC's using a micromachined photoconductive sampling probe

Optoelectronic approach to on-chip device and circuit characterization at microwave and millimeter-wave frequencies

Progress of High-Speed Optoelectronics

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