Millimeter-wave high power amplifiers using pseudomorphic HEMTs

Sharma, Arvind Kumar; Onak, G.; Yamauchi, Daisuke; Stones, D.I.; Goel, J.; Lai, R.; Tan, K. H.

doi:10.1109/mwsym.1994.335232

Cited by 9 publications

(2 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In particular, microwave transistors and circuits incorporating AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor ͑PHEMT͒ structures have demonstrated excellent power, efficiency, and gain performance. [2][3][4][5] The most critical layer in the structure is the pseudomorphic InGaAs channel layer. Due to strain limitations between the InGaAs channel layer and GaAs substrate as well as quantum size effects, the InGaAs channel layer is approximately restricted to 20% indium content and 100-120 Å thickness.…”

Section: Improved Pseudomorphic High Electron Mobility Transistor Strmentioning

confidence: 99%

Improved pseudomorphic high electron mobility transistor structures on InGaAs substrates

Hoke

Lyman

Mosca

et al. 1997

Journal of Applied Physics

View full text Add to dashboard Cite

Single and double pulse doped pseudomorphic high electron mobility transistor structures with 110-Å-thick InGaAs channel layers have been grown on InxGa1−xAs substrates (x=0.04; 0.065) and GaAs substrates. For In0.23Ga0.77As channel layers, higher electron mobilities were obtained on In0.04Ga0.96As substrates due to reduced strain. Transmission electron microscopy micrographs on a GaAs-based sample exhibited a roughened selectively doped heterojunction but no detected misfit dislocations. Pseudomorphic structures with In0.27Ga0.73As channel layers were also grown on In0.065Ga0.935As substrates with good transport and optical properties. The properties of the analogous structure grown on GaAs were severely degraded. Transmission electron microscopy micrographs on the GaAs sample showed a very rough selectively doped heterojunction with misfit dislocations.

show abstract

Section: Improved Pseudomorphic High Electron Mobility Transistor Strmentioning

confidence: 99%

Improved pseudomorphic high electron mobility transistor structures on InGaAs substrates

Hoke

Lyman

Mosca

et al. 1997

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…A power amplifier with superior performance is needed as a key device in the systems for small size, low weight, and low cost. There are many reports for V-band power amplifiers [2][3][4][5][6][7][8]. They aim to achieve higher power, efficiency, and power gain mainly.…”

Section: Introductionmentioning

confidence: 99%

A V-Band High Power and High Gain Amplifier MMIC using GaAs PHEMT Technology

Chaki

Amasuga

Goto

et al. 2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

View full text Add to dashboard Cite

We report the performance of a V-band 5-stage high power amplifier MMIC using a millimeter-wave 0.1 μm GaAs pHEMT. It has demonstrated that an output power of 28.8 dBm (759 mW) at 1 dB compression point with 17.8 dB power gain and 14.2% PAE at 59 GHz. And it delivers an output power of 28.9 dBm (776 mW) at a saturation point. These results represent, to the best of our knowledge, the highest output power and power gain for single-ended MMICs.

show abstract