Millimeter-Wave Analog Pre-distorted Power Amplifier at 65nm Node

Quadir, Nasir Abdul; Kashfi, Syed; Jain, Amit; Albasha, Lutfi

doi:10.1109/iccspa.2019.8713721

Cited by 5 publications

(3 citation statements)

References 21 publications

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“…A linearizer technique of cold-mode MOSFET [14][15][16][17][18][19][20] is implemented in the design. It not only improves the linearity of the design but also improves the gain at higher frequency bands.…”

Section: Proposed Designmentioning

confidence: 99%

“…In higher frequency bands, the circuits using digital predistortion technique consumes more power due to higher clock rates. Hence analog predistortion [14][15][16], which can be divided as active and passive, are seen as a better alternative. Passive analog predistortion is less complex compared to its active counterpart and does not obviously add any gain, however it does improve the linearity, and is considered as a better option for high-frequency applications [17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The Design and Process Reliability Analysis of Millimeter Wave CMOS Power Amplifier with a Cold Mode MOSFET Linearization

Quadir,

Jain,

Kashfi

et al. 2023

IET Circuits, Devices & Systems

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A power amplifier design operating at 28 GHz for communication applications is presented in this paper. Analog predistorted technique is used to improve the linearity using a cold mode MOSFET linearizer. The paper reports +19.8 dBm of peak power at the output and power-added efficiency (PAE) of 17% is attained by the designed circuit. The 1-dB compression point linearity was +18.6 dBm. The adjacent channel power ratio (ACPR) simulations were performed for the different communication standards like 802_11n_40M, CDMA, IS-95, and 802_11n_20M. Design specification variations of the amplifier have been analyzed over five process corners and simulations were performed to validate compliance with standards and robustness of the designed circuit. Monte Carlo simulation were performed to assess the performance over statistical variability of PAE and power gain. It is believed that this linearization design and the verifications used are done for the first time on a 65-nm RFCMOS process.

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Section: Proposed Designmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The Design and Process Reliability Analysis of Millimeter Wave CMOS Power Amplifier with a Cold Mode MOSFET Linearization

Quadir,

Jain,

Kashfi

et al. 2023

IET Circuits, Devices & Systems

Self Cite

View full text Add to dashboard Cite

show abstract

“…In recent years, many states of the art analog linearizers using either diodes or transistors have been reported. [9][10][11][12][13][14][15][16][17] However, the linearization performances of the analog linearizers are still not good enough to linearize wideband PAs excited by high modulated signals, especially to RFPAs with 5G new radio (5G NR) signals. Therefore, in this article, in order to linearize 5G smallcell PAs, an APD, named as twin nonlinearity generator based APD (TNG-APD) made of the pseudomorphic high electron mobility transistor (pHEMT), is proposed.…”

Section: Introductionmentioning

confidence: 99%

Twin nonlinearity generator‐based analog predistorter for small‐cell power amplifiers

Huang

Liu

et al. 2022

Int J RF Mic Comp-Aid Eng

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In this article, a simple analog predistorter (APD), named twin nonlinearity generator based APD (TNG-APD) using the pseudomorphic high electron mobility transistor (pHEMT), is proposed for linearizing small-cell radio frequency power amplifiers (RFPAs) in the fifth-generation mobile communication system (5G). The TNG-APD is composed of two cascaded common-source field effect transistors (FETs) and a phase shifter. To verify the linearization, a TNG-APD circuit operating at central frequency of 3.5 GHz is fabricated to linearize wideband RFPAs. The RFPA under the test in this article is a 1-W RFPA for 5G small-cell basestations. The measurement results show that the adjacent channel power ratio (ACPR) of the RFPA is suppressed by more than 15 dB under a 100 MHz bandwidth 5G new radio (5G-NR) signal with simultaneous quadrature phase shift keying (QPSK) modulation and 256-quadrature amplitude modulation (256QAM), and more than 7 dB under a 200 MHz bandwidth 64 QAM signal. The measured error vector magnitude (EVM) under the 100 MHz 5G-NR signal is improved from 6.2% to 2.3%. Therefore, the proposed TNG-APD has high potential to linearize wideband RFPAs in the 5G small-cell basestation.

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Review on Solid-State Narrow and Wide-Band Power Amplifier

Urooj,

Al Absi

2024

Arab J Sci Eng

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Millimeter-Wave Analog Pre-distorted Power Amplifier at 65nm Node

Cited by 5 publications

References 21 publications

The Design and Process Reliability Analysis of Millimeter Wave CMOS Power Amplifier with a Cold Mode MOSFET Linearization

The Design and Process Reliability Analysis of Millimeter Wave CMOS Power Amplifier with a Cold Mode MOSFET Linearization

Twin nonlinearity generator‐based analog predistorter for small‐cell power amplifiers

Review on Solid-State Narrow and Wide-Band Power Amplifier

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