Millimeter Impatt Amplifier Optimization for Telecommunication Systems

Abstract

High and moderate power Ka-Band (33-40 GHz) Impatt diode amplifiers for use especially in telecommunication systems have been investigated. We point out the means of obtaining optimal conditions (for SOR or DDR diode parameters and operating conditions) for the principal amplifier characteristics: gain-bandwidth product, output power levels, group delay variations, AM-PM conversion rates.The theoretical results achieved, corroborated by the experimental ones, show the excellent behaviour of these Impatt amplifiers operating in telecommunication systems.