Migration of Te inclusions in CdZnTe single crystals under the temperature gradient annealing

“…These numerical results are in agreement with the results obtained in experimental annealing of CZT wafers under a temperature gradient. Several experimental works [19,20] have shown that the elimination efficiency of Te inclusions after annealing under a temperature gradient of increases largely at annealing temperatures around .…”

Section: Migration Of Te Inclusionsmentioning

confidence: 99%

Numerical and experimental investigation of CdZnTe growth by the boron oxide encapsulated vertical Bridgman method

Stelian

Calestani

Velázquez

et al. 2021

International Journal of Heat and Mass Transfer

View full text Add to dashboard Cite

Cadmium zinc telluride crystals of 4.8 cm in diameter grown by the boron oxide encapsulated vertical Bridgman technique exhibit good structural quality with large grains and low dislocation density. However, the ingots contain Te inclusions, which are trapped at the growth interface during the crystallization process.Global modeling of the furnace was applied in order to investigate the temperature gradients and the evolution of the growth interface shape in this system. Transient computations, which include the crucible movement, show that the crystal-melt interface is concave toward the melt in the conical part of the ampoule, then becomes convex during the growth in the cylindrical part of the ampoule. Concave shapes of the interface and very homogeneous temperature distribution at the beginning of the solidification process promote the growth of a polycrystalline material. A novel hypothesis explaining the mechanism of grains formation at the ampoule tip was formulated. Our calculations show that the anomalous Zn segregation is due to the poor solute mixing at the beginning of the solidification process. The modeling of the standard growth process reveals very low vertical temperature gradients in the crystal (2-4 K/cm). Such low temperature gradients are 2 not favorable to eliminate the Te inclusions in the as grown crystal. A numerical model was employed to analyze the temperature field influence on the migration/size reduction of Te inclusions.

show abstract

“…In current technologies, the presence of disorder transition, no matter it is local or complete structural transition, can be sensitively detected using advanced characterization techniques such as x-ray diffraction (XRD), transmission electron microscopy (TEM), and micro-Raman. [14][15][16][17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Pressure-induced disorder and nanosizing inhibits superconductivity in In₂Te₃

Zhen,

Liu,

Dong

et al. 2023

Nanotechnology

Self Cite

View full text Add to dashboard Cite

The generation of disorder often gives rise to profound and irreversible physical phenomena. Here, we explore the influence of disorder on the superconducting properties of In2Te3 through comprehensive high-pressure investigations. Building upon previous findings, we investigated the progressive suppression of superconductivity in In2Te3 during the depressurization process: the increased disorder that ultimately leads to the complete disappearance of the superconducting state. Simultaneously, our high-pressure X-ray diffraction analysis reveals an irreversible structural phase transition. Furthermore, microstructure analysis using transmission electron microscopy (TEM) clearly demonstrates both grain refinement and a substantial enhancement of disorder. These findings not only provide valuable insights into the mechanism by which disorder suppresses superconductivity, but also offer guidance for future advancements in the fabrication of atmospheric-pressure superconductors.

show abstract

Migration of Te inclusions in CdZnTe single crystals under the temperature gradient annealing

Cited by 16 publications

References 24 publications

Interplay mechanism between secondary phase particles and extended dislocations in CdZnTe crystals

Interplay mechanism between secondary phase particles and extended dislocations in CdZnTe crystals

Numerical and experimental investigation of CdZnTe growth by the boron oxide encapsulated vertical Bridgman method

Pressure-induced disorder and nanosizing inhibits superconductivity in In₂Te₃

Contact Info

Product

Resources

About

Migration of Te inclusions in CdZnTe single crystals under the temperature gradient annealing

Cited by 16 publications

References 24 publications

Interplay mechanism between secondary phase particles and extended dislocations in CdZnTe crystals

Interplay mechanism between secondary phase particles and extended dislocations in CdZnTe crystals

Numerical and experimental investigation of CdZnTe growth by the boron oxide encapsulated vertical Bridgman method

Pressure-induced disorder and nanosizing inhibits superconductivity in In2Te3

Contact Info

Product

Resources

About

Pressure-induced disorder and nanosizing inhibits superconductivity in In₂Te₃