The structural, electronic, and magnetic
properties for nondefective
and defective structures and the diffusion of both cations and anions
in chromium oxide (α-Cr2O3) are investigated
theoretically with the periodic quantum-chemical method. Three different
point defects are studied, namely, Cr vacancy, Cr Frenkel defect (composed
of an interstitial Cr atom and a Cr vacancy), and O vacancy. All these
defects affect the electronic properties of Cr2O3 drastically and are involved in diffusion processes in passive film
growth. The calculated defect formation energy shows that the stability
of defects falls in the following order: Cr Frenkel defect (E
Fr(Cr) = 2.36 eV) > Cr vacancy (E
V(Cr) = 4.84 eV) > O vacancy (E
V(O) = 5.12 eV). Relaxation occurs only on the first and the
second
nearest neighbors in each case. Each defect adds an extra localized
level inside the band gap. Cr Frenkel defects add donor levels composed
of O states; Cr vacancy defects add acceptor levels composed of states
from both Cr and O atoms; and O vacancies do not give any level in
the gap. Defects influence the magnetic moments on surrounding atoms,
especially on the first nearest neighbors. Various diffusion processes
of both cations and anions are investigated by calculating the Cr3+ and O2– diffusion among various sites
using the climbing-image nudged-elastic-band (cNEB) approach. The
activation energy E
D (2.57–3.21
eV) obtained for the diffusion of Cr3+ is in good agreement
with the experimental E
D (2.46 eV). The
calculated E
D for O2– ranges from 2.21 to 3.65 eV, which is in agreement with experimental
data. For each investigated diffusion pathway, frequencies calculated
by finite difference methods are used to obtain jump frequencies using
transition state theory (TST). Combining the pre-exponential factors
with activation energies, the diffusion coefficients are calculated
which are compared with experimental values.