Migration kinetics of ion-implanted beryllium in glassy carbon

Koskelo, Otso; Köster, U.; Riihimäki, I.; Räisänen, J.

doi:10.1016/j.diamond.2008.06.002

Cited by 11 publications

(10 citation statements)

References 14 publications

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“…Previous work on ion species implanted in GC include Be [8], Cs [9], Sr [10], Co [11] K [12], Na [13], Ti [14], N [15], W [16] but after extensive literature research no data for diffusion studies of Cd implanted in GC was found. Most of these studies investigated the improvement of mechanical properties of GC surface layer after ion implantation [17].…”

Section: Introductionmentioning

confidence: 99%

Annealing effects on the migration of ion-implanted cadmium in glassy carbon

Hlatshwayo

Sebitla

Njoroge

et al. 2017

Nuclear Instruments and Methods in Physics Research Section B:

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The migration behavior of cadmium (Cd) implanted into glassy carbon and the effects of annealing on radiation damage introduced by ion implantation were investigated. The glassy carbon substrates were implanted with Cd at a dose of 2×10 16 ions/cm 2 and energy of 360 keV. The implantation was performed at room temperature (RT), 430 °C and 600 °C. The RT implanted samples were isochronally annealed in vacuum at 350, 500 and 600 °C for 1 hour and isothermally annealed at 350 °C up to 4 hours. The as-implanted and annealed samples were characterized by Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Raman results revealed that implantation at room temperature amorphized the glassy carbon structure while high temperature implantations resulted in slightly less radiation damage. Isochronal annealing of the RT implanted samples resulted in some recrystallization as a function of increasing temperature. The original glassy carbon structure was not achieved at the highest annealing temperature of 600 °C. Diffusion of Cd in glassy carbon was already taking place during implantation at 430 °C. This diffusion of Cd was accompanied by significant loss from the surface during implantation at 600 °C. Isochronal annealing of the room temperature implanted samples at 350 °C for 1 hour caused Cd to diffuse towards the bulk while isothermal annealing at 500 and 600 °C resulted in the migration of implanted Cd toward the surface accompanied by a loss of Cd from the surface. Isothermal annealing at 350 °C for 1 hour caused Cd to diffuse towards the bulk while for annealing time > 1 hour Cd diffused towards the surface. These results were interpreted in terms of trapping and de-trapping of implanted Cd by radiation damage.

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Section: Introductionmentioning

confidence: 99%

Annealing effects on the migration of ion-implanted cadmium in glassy carbon

Hlatshwayo

Sebitla

Njoroge

et al. 2017

Nuclear Instruments and Methods in Physics Research Section B:

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“…The value for the diffusion coefficient of 2.15×10 -17 m 2 s -1 was obtained. The diffusion coefficient of beryllium in GC at 1285 and 1340 °C has been reported as 3.0×10 −17 and 2.5×10 −17 m 2 s -1 respectively by Koskelo et al [18]. Although the temperatures are much higher, the diffusion coefficients are comparable and within the same magnitude indicating similar diffusion mechanisms (Fickian diffusion).…”

Section: Thermal Annealingmentioning

confidence: 79%

“…For GC to be a good candidate for containment, it must be a good diffusion barrier for fission products and its near-surface region structure must remain unchanged so that it retains its properties after In implantation, annealing and even after swift heavy ion (SHI) irradiation. Previous work on ion species implanted in GC include Be [18], Cs [19], Sr [20], Co [4] K [21], Na [15], Ti [22], N [23], W [17], Cd [24] but after extensive literature research no study of In implanted in GC has been carried out and no study on SHI irradiation of implanted GC has been previously conducted. The diffusion coefficient calculated in this study after isochronal annealing has been compared to that of beryllium implanted into GC calculated by Koskelo et al [18].…”

Section: Introductionmentioning

confidence: 99%

Structural modification of indium implanted glassy carbon by thermal annealing and SHI irradiation

Njoroge

Sebitla

Theron

et al. 2017

Vacuum

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The structural changes, migration behaviour of indium (In) implanted into glassy carbon (GC) and the effect of annealing on radiation damage introduced by ion implantation have been investigated. The GC substrates were implanted with 360 keV indium ions to a fluence of 2.0×10 16 ions/cm 2 at room temperature (RT) and 350 °C. The RT implanted samples were isochronally annealed in vacuum between 200 and 1000 °C for 1 hour. The 350 °C implanted GC substrates were irradiated 167 MeV with Xe 26+ ions at room temperature to a maximum fluence of 5.0×10 14 ions/cm 2. The implanted GC structure was damaged and had an almost amorphized structure. Annealing of the RT implanted samples resulted in some recrystallization which increased with temperature and the diffusion behaviour of implanted In. Fickian diffusion of implanted In started after annealing at 300 °C, however, structural changes in the GC were observed after annealing at 200 °C. Annealing at 400 and 600 °C resulted in the diffusion of In toward the surface of GC accompanied by a loss of In. The SHI irradiation of the 350 °C implanted samples at increasing fluence, did not result in a detectable migration of implanted In.

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“…In recent years tracer diffusion studies have dealt with transition metal diffusion in CdTe [32 -37], diffusion of Be, Ga, and Sn in Ge and SiGe alloys [38], of Be in glassy carbon [39,40] and of Mn in GaAs [41]. Of particular technological importance is the fact that the diffusion of charged dopant atoms is strongly affected by the presence of an internal electric field [42].…”

Section: Diffusion Studiesmentioning

confidence: 99%