2010
DOI: 10.1103/physrevlett.105.196102
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Migration and Localization of Metal Atoms on Strained Graphene

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Cited by 326 publications
(270 citation statements)
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“…It has been found that the strain field around such a defect leads to an attractive interaction between the defect and a metal atom migrating on the surface over a scale of 1Ϫ2 nm. 55 This is shown in Figure 5 where a W atom jumps forth and back between two defective sites on graphene that both attract the W atom. A biaxial strain of 1% in the graphene lattice increases the adsorption energy for transition metal adatoms by 0.06Ϫ0.16 eV, depending on the metal species and the adsorption site.…”
Section: Defect Typesmentioning
confidence: 98%
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“…It has been found that the strain field around such a defect leads to an attractive interaction between the defect and a metal atom migrating on the surface over a scale of 1Ϫ2 nm. 55 This is shown in Figure 5 where a W atom jumps forth and back between two defective sites on graphene that both attract the W atom. A biaxial strain of 1% in the graphene lattice increases the adsorption energy for transition metal adatoms by 0.06Ϫ0.16 eV, depending on the metal species and the adsorption site.…”
Section: Defect Typesmentioning
confidence: 98%
“…Intriguing magnetic properties have been reported for many TM impurities. 69 The strong bonding (e.g., 8.6 or 8.9 eV for a tungsten atom trapped in a single or double vacancy, respectively, 55 ) shows that such defect complexes are stable, and the metal atoms cannot be removed thermally or by irradiation with sub-MeV electrons. Topology of Defective Graphene.…”
Section: Defect Typesmentioning
confidence: 99%
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“…Reconstructed defects without dangling bonds, such as SW defects and divacancies, have the possibility of increasing local reactivity [282] due to the locally changed density of -electrons [280,283]. It is evidenced from experiments that metal atoms may be trapped in the reconstructed vacancies [284]. Substitutional non-carbon atoms embedded in the graphitic lattice, such as nitrogen and boron dopants, possess more or less valence electrons than that of carbon atoms, and thus increase the surface reactivity [285].…”
Section: Disorders In Graphene Structurementioning
confidence: 99%
“…Recently, graphene has gathered tremendous attention due to its unique electronic and mechanical properties for nanoscale electronics 5 . As a candidate material for spintronic devices, transition-metal-atom-decorated graphene (denoted as TM-graphene hereafter) has been studied extensively in theory 6-9 and experiment [10][11][12][13][14][15] , manifesting some remarkable electronic and magnetic behaviors. Thus, developing a novel method to tune the magnetism of TM-graphene system is quite urgent for future spintronics applications.…”
Section: Introductionmentioning
confidence: 99%