Midinfrared lead-chalcogenide vertical external cavity surface emitting laser with 5μm wavelength

Rahim, M.; Arnold, Martin; Felder, F.; Behfar, Stefan Kambiz; Zogg, H.

doi:10.1063/1.2798254

Cited by 51 publications

(30 citation statements)

References 13 publications

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“…Starting with GaSb substrate with ternary (e.g., GaInSb, AlAsSb) and quaternary (e.g., GaInAsSb, GaAlAsSb) alloys, VECSELs with emission wavelengths in the 2.0-2.3 mm range have been demonstrated (Chapter 4) [23,48,81,94]. Recently, group IV-VI semiconductor PbTe/PbEuTe and PbSe/PbEuTe-based material systems have been used to demonstrate VECSELs in the 4.5-5 mm wavelength range [82][83][84][85]. VECSELs have also been fabricated in the GaN/InGaN material system [95,96], which opens the 400 nm wavelength region for direct VECSEL operation.…”

Section: Wavelength Versatility Through Semiconductor Materials and Smentioning

confidence: 99%

“…One of the most important properties of VECSEL lasers is their wavelength versatility: VECSELs have been made with output wavelengths ranging from 244 nm [77] and 338 nm [24,78] in the UV; through the 460-675 nm range of blue, green, yellow, orange, and red in the visible (Chapter 3) [22, 24, 52-54, 58, 79]; through the 0.9-2.4 mm in the near-infrared (NIR) (Chapter 4) [18,23,67,68,80,81]; to the 5 mm in the mid-IR [82][83][84][85]. In principle, any wavelength in this range is accessible by design.…”

Section: Vecsel Wavelength Versatility Through Materials and Nonlineamentioning

confidence: 99%

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VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

Kuznetsov¹

2010

Semiconductor Disk Lasers

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Since its invention and demonstration in 1960, several types of laser have been developed, such as solid-state, semiconductor, gas, excimer, and dye lasers [1]. Today, lasers are used in a wide range of important applications, particularly in optical fiber communication, optical digital recording (CD, DVD, and Blu-ray), laser materials processing, biology and medicine, spectroscopy, imaging, entertainment, and many others. A number of properties enable the application of lasers in these diverse areas, each application requiring a particular combination of these properties. Some of the most important laser properties are laser emission wavelength; output optical power; method of laser excitation, whether by optical pumping or electrical current injection; laser power consumption and efficiency; high-speed modulation or short pulse generation ability; wavelength tunability; output beam quality; device size; and so on. Thus, optical fiber communication [2], a major application that enables modern Internet, commonly requires lasers with emission wavelengths in the 1.55 mm lowloss band of glass fibers and with single-transverse mode output beams for coupling into single-mode optical fibers. Typically, a given laser type excels in some of these properties, while exhibiting shortcomings in others. For example, by using different material compositions and structures, the most widely used semiconductor diode laser [3][4][5][6][7][8][9][10][11][12] can cover a wide range of wavelengths from the ultraviolet (UV) to the mid-IR, can be advantageously driven by diode current injection, and is very compact and efficient. However, the good beam quality, that is, single-transverse mode nearcircular beam operation, can be typically achieved in semiconductor lasers only for output powers below 1 W. Much higher power levels are achievable from semiconductor lasers only with large aspect ratio highly multimoded poor quality optical beams. On the other hand, the solid-state lasers [13,14], including fiber lasers [15], can emit hundreds of watts of output power with excellent beam quality, however, their emission wavelengths are restricted to discrete values of electronic transitions in ions, such as the classic 1064 nm wavelength of the Nd:YAG laser, making them Semiconductor Disk Lasers. Physics and Technology. Edited by Oleg G. Okhotnikov

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Section: Wavelength Versatility Through Semiconductor Materials and Smentioning

confidence: 99%

Section: Vecsel Wavelength Versatility Through Materials and Nonlineamentioning

confidence: 99%

VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

Kuznetsov¹

2010

Semiconductor Disk Lasers

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“…PbTe is a narrow-gap semiconductor that is widely used to manufacture mid-wavelength infrared lasers and detectors [1][2][3]. It is also known as important material for thermoelectric applications.…”

Section: Introductionmentioning

confidence: 99%

Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions

Tetyorkin¹

2013

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Iso-type p-PbTe/p-CdTe heterojunctions were grown on BaF 2 substrates by using the hot-wall epitaxy technique. The growth details are presented. The carrier transport mechanism was investigated by means of the current-voltage measurements. At 77 K the dominant conduction mechanism was found to be the space-charge-limited current. The photovoltaic response in the long-wave infrared region with the half-peak cut-off wavelength ranged from 8.0 to 9.0 m was observed in these heterojunctions for the first time. The possible mechanism of the photoresponse is the internal photoemission of holes from p-PbTe across the heterojunction barrier.

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“…Their foundation on semiconductor technology has the major advantage of emission wavelength flexibility which is easily achieved by bandgap engineering. They support emission wavelengths from the ultraviolet (391 nm) [6] up to the mid-infrared (mid-IR) spectral region (5.3 μm) [7]. Such semiconductor lasers secured their position in the continuous-wave (CW) laser market [8][9][10], providing high power levels in fundamental transverse mode [9,[11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Ultrafast optical parametric oscillator pumped by a vertical external-cavity surface-emitting laser (VECSEL)

et al. 2017

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Abstract:We report the first optical parametric oscillator synchronously pumped by a SESAM modelocked vertical external-cavity surface-emitting laser (VECSEL). As a nonlinear medium, we use a periodically poled MgO:PPLN crystal. The VECSEL operates at a wavelength of 982 nm and a repetition rate of 198 MHz. The pump radiation is converted to signal and idler wavelengths tunable in the ranges of 1.4-1.8 µm and 2.2-3.5 μm, respectively, simply by a change of the poling period and crystal temperature. The signal pulses have a duration between 2 ps to 4 ps and an average output power up to 100 mW.

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Midinfrared lead-chalcogenide vertical external cavity surface emitting laser with 5μm wavelength

Cited by 51 publications

References 13 publications

VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions

Ultrafast optical parametric oscillator pumped by a vertical external-cavity surface-emitting laser (VECSEL)

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