Mid-infrared two-photon absorption in an extended-wavelength InGaAs photodetector

Piccardo, Marco; Rubin, Noah A.; Meadowcroft, Lauren; Chevalier, Paul; Yuan, Henry; Kimchi, Joseph; Capasso, Federico

doi:10.1063/1.5018619

Cited by 35 publications

(18 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In case of typical Si and other semiconductor based PDs, the quadratic dependence of PC arises at very high optical power densities due to the process of two photon absorption (TPA). [ 28–32 ] However, a simple analysis can be done to understand the negligible likelihood of TPA in our experiments. The TPA cross‐section is given by α TPA = β(λ) I (λ), where β(λ) is the TPA coefficient at that particular wavelength and I (λ) is the intensity of the light used.…”

Section: Resultsmentioning

confidence: 99%

Copper Iron Sulfide Nanocrystal‐Bulk Silicon Heterojunctions for Broadband Photodetection

Sugathan

Saigal

Rajasekar

et al. 2020

Adv Materials Inter

View full text Add to dashboard Cite

This study describes the optoelectronic characteristics of CuFeS2/Si nanocrystal/bulk heterojunctions. These heterojunctions show a strong photocurrent response under ambient conditions upon excitation from a wide optical spectrum, from 460 to 2200 nm. The devices comprise of a heterojunction formed between heavily doped n‐type silicon (1–100 Ω cm) and copper iron sulfide (CuFeS2) nanocrystal films. Over the spectral range 460–2200 nm the device shows a fast response (20 µs at NIR wavelengths), along with responsivity and detectivity of 4.68 mA W−1 and 5.29 × 109 Jones at 1900 nm wavelength. The photocurrent is further observed to be a nonlinear function of power. These properties of the devices are discussed in terms of a defect filling mechanism. Besides their regular photoresponse described above, the devices also exhibit a slower photothermal response, allowing these to also sense hot objects (450 K; excess 6 mW incident onto the device) within the focal plane, thereby extending the useful sensing range of the devices deeper into the infrared.

show abstract

Section: Resultsmentioning

confidence: 99%

Copper Iron Sulfide Nanocrystal‐Bulk Silicon Heterojunctions for Broadband Photodetection

Sugathan

Saigal

Rajasekar

et al. 2020

Adv Materials Inter

View full text Add to dashboard Cite

show abstract

“…Similar cases have been illustrated in CdTe, [5] HgCdTe, [6,7] and InSb. [10][11][12][13] Meanwhile, the high quality of the single crystals (Figures 1 and 2 along with SCXRD detection) is also responsible for the sensitivity to low power light especially as compared to the polycrystalline films with grain boundaries and dense defects. Meanwhile, the low dark current of ≈10 nA at 1.0 V makes the device capable to detect a very weak light comparably.…”

Section: Resultsmentioning

confidence: 99%

“…

…”

mentioning

confidence: 99%

Low‐Temperature Growth of High‐Quality Ag₂HgS₂ Crystals for Setup of Weak‐Light UV–Visible–NIR Photodetectors

Wang

You

et al. 2021

Advanced Optical Materials

View full text Add to dashboard Cite

their ternary alloys, typically including CdTe, [5] HgCdTe, [6,7] InAs, [8,9] InAsSb, and InGaAs, [10][11][12][13] were proved to be the most promising infrared materials, and most of them have already been utilized in various aspects for photodetections commercially. [14,15] Generally, the light power of the common infrared radiation is relatively low from the traditional infrared materials, which would be less effective in most cases for weak light detection in infrared regions. So, it is highly necessary to find out possible new candidates for photodetection of weak infrared light sensitively.Ag 2 HgS 2 exists naturally as a stable mineral known as imiterite with monoclinic phase, which was first discovered in Morocco in 1985. [16] However, it was only fabricated till 2002 via the initially successful solvothermal synthesis at 180−200 °C for long reaction time (5 days) while the samples were only picked up from the mixture with the corresponding endmembers of Ag 2 S and HgS. [17] Thereafter, Ag 2 HgS 2 powders with diameters of ≈200 nm were obtained via a similar process with some modifications of precursors along with their feedstocks [18] and they were also fabricated via a microwave-assisted solvothermal route, in which the reaction system was irradiated using 100 W microwave (2450 MHz) for 1 h. [19] Powder samples with granular sizes of ≈200 nm in diameter were not suitable for fabrication of optoelectronic devices conveniently due to the granular Weak-light photodetection shows considerable potential in both theoretical and technical aspects while it would be a key issue to explore new candidate materials for practical application in view of high reliability and durability of the devices under ambient conditions. In this work, Ag 2 HgS 2 single crystal rods (SCRs) with length up to 1.2 cm and width ranging from 10 to 200 µm are successfully fabricated in pure phase via facile solvothermal process at 200 °C for 24 h for the first time. The Ag 2 HgS 2 SCRs are technically investigated, and the study reveals that they are in high quality via the determination of their crystal structure, morphology, and optical properties. Density functional theory (DFT) calculations are carried out to explore more reliably details on the band structure of bulk Ag 2 HgS 2 . Meanwhile, a series of photodetectors based on the individual Ag 2 HgS 2 SCRs are fabricated, and they convey sensitive responses to a 0.170 µW cm −2 weak light and unanimous responses to incident light with different wavelengths from 254 to 980 nm. In addition, the devices show excellent detecting performances without any obvious slump after the Ag 2 HgS 2 SCRs exposed in air over 18 months.Recently, the exploration of new kinds of infrared light mate-

show abstract

“…The intensity map on Figure 1.c illustrates the capability of the nanostructure to concentrate and colocalise the intensities I p and I s , thus increasing the TPA by a gain G = 120 for the optimal optical configuration (a collimated TE polarised 3.39 µm signal at normal incidence and a collimated TE-polarised pump at 1.06 µm pump with an angle of incidence of 11.83 • ). However, other pump related subbandgap processes have been shown to compete with NDTPA [29,30,31], leading to a higher background current and thus a lower SNR especially for low signal intensity.…”

Section: Discussionmentioning

confidence: 99%

Methodology of optimisation for a nanostructured two-photon absorption photodetector

Dauphin

Fix

Jaeck

et al. 2021

Preprint

View full text Add to dashboard Cite

We introduce a 3-step method to optimise a nanostructured photodetector for infrared sensing through non degenerated two-photon absorption (NDTPA). First, the nanostructure is designed to tailor the distribution and concentration of both pump and signal intensities within the absorbing layer, thus leading to a gain in two-photon absorption. Second, the issue of the competition between NDTPA and other sub-bandgap transitions is tackled with a new figure of merit to favor as much as possible NDTPA while minimising other absorption processes. Third, a refined computation of the gain and the figure of merit is done to consider focused beams. Finally, two scenarios based on low power infrared photodetection are investigated to illustrate the flexibility and adaptibility of the method. It is shown that the gain is up to 7 times higher and the figure of merit is up to 20 times higher compared to the literature.

show abstract

Mid-infrared two-photon absorption in an extended-wavelength InGaAs photodetector

Cited by 35 publications

References 23 publications

Copper Iron Sulfide Nanocrystal‐Bulk Silicon Heterojunctions for Broadband Photodetection

Copper Iron Sulfide Nanocrystal‐Bulk Silicon Heterojunctions for Broadband Photodetection

Low‐Temperature Growth of High‐Quality Ag₂HgS₂ Crystals for Setup of Weak‐Light UV–Visible–NIR Photodetectors

Methodology of optimisation for a nanostructured two-photon absorption photodetector

Contact Info

Product

Resources

About

Mid-infrared two-photon absorption in an extended-wavelength InGaAs photodetector

Cited by 35 publications

References 23 publications

Copper Iron Sulfide Nanocrystal‐Bulk Silicon Heterojunctions for Broadband Photodetection

Copper Iron Sulfide Nanocrystal‐Bulk Silicon Heterojunctions for Broadband Photodetection

Low‐Temperature Growth of High‐Quality Ag2HgS2 Crystals for Setup of Weak‐Light UV–Visible–NIR Photodetectors

Methodology of optimisation for a nanostructured two-photon absorption photodetector

Contact Info

Product

Resources

About

Low‐Temperature Growth of High‐Quality Ag₂HgS₂ Crystals for Setup of Weak‐Light UV–Visible–NIR Photodetectors