Mid-infrared to terahertz ultra-broadband absorber based on all-dielectric metamaterial

Li, Yulian; Qin, Dingding; Gao, Wei; Long, Wenxiao; Jiao, Jiajia; An, Bowen

doi:10.1007/s11082-024-06364-0

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2024

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“…It can achieve the impedance matching by coupling the top layer and the bottom layer. Recently, all-dielectric MAs have been proposed to realize perfect absorption [34][35][36][37][38]. In addition, there has been considerable interest in designing MAs based on silicon [39][40][41].…”

Section: Introductionmentioning

confidence: 99%

All-Silicon Polarization-Insensitive Metamaterial Absorber in the Terahertz Range

Xu,

Li,

Han

et al. 2024

Materials

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All-silicon terahertz absorbers have attracted considerable interest. We present a design and numerical study of an all-silicon polarization-insensitive terahertz metamaterial absorber. The meta-atoms of the metamaterial absorber are square silicon rings which can be viewed as gratings. By properly optimizing the structure of the meta-atom, we achieve a broadband absorptivity that is above 90% ranging from 0.77 THz to 2.53 THz, with a relative bandwidth of 106.7%. Impedance matching reduces the reflection of the terahertz waves and the (0, ±1)-order diffraction induce the strong absorption. The absorption of this absorber is insensitive to the polarization of the terahertz wave and has a large incident angle tolerance of up to 60 degrees. The all-silicon metamaterial absorber proposed here provides an effective way to obtain broadband absorption in the terahertz regime. Metamaterial absorbers have outstanding applications in terahertz communication and imaging.

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