2022
DOI: 10.1364/oe.448284
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Mid-infrared silicon-on-insulator waveguides with single-mode propagation over an octave of frequency

Abstract: Increasing the working optical bandwidth of a photonic circuit is important for many applications, in particular chemical sensing at mid-infrared wavelengths. This useful bandwidth is not only limited by the transparency range of waveguide materials, but also the range over which a waveguide is single or multimoded for predictable circuit behaviour. In this work, we show the first experimental demonstration of “endlessly single-mode” waveguiding in silicon photonics. Silicon-on-insulator waveguides were design… Show more

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Cited by 6 publications
(5 citation statements)
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“…The operating principle of the ESM waveguides relies on a small effective index contrast between the fundamental mode and the cladding mode. However, this leads to the inherent drawback that the bending loss is significant at even large bend radii; in [2], our simulations gave a 90° bending loss of approximately 0.6 dB for a radius of 300 µm. Evidently, this is a limiting factor in the use of the ESM waveguides in a practical PIC.…”
Section: Compact Bendsmentioning
confidence: 80%
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“…The operating principle of the ESM waveguides relies on a small effective index contrast between the fundamental mode and the cladding mode. However, this leads to the inherent drawback that the bending loss is significant at even large bend radii; in [2], our simulations gave a 90° bending loss of approximately 0.6 dB for a radius of 300 µm. Evidently, this is a limiting factor in the use of the ESM waveguides in a practical PIC.…”
Section: Compact Bendsmentioning
confidence: 80%
“…The impact from the compact bend design is that it facilitates the practical use of the ESM waveguides in a PIC and directly addresses one of the noted drawbacks in [2]. For our application in MIR absorption spectroscopy, spectrometers based on Mach-Zehnder interferometers require three main components for broadband operation: single-mode waveguides, broadband splitters, and optical delay lines.…”
Section: Discussionmentioning
confidence: 99%
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“…Various optical passive components at S-MWIR [8,9] wavelengths were demonstrated using SOI up to 3.5 µm [10] and in Ge-on-Si up to 8.5 µm [11]. There are also few demonstrations of heterogeneously integrated InP gain materials on silicon PICs reported around 2.3 µm [12].…”
Section: Introductionmentioning
confidence: 99%