Mid-infrared light generation by high order SRS effect in silicon ring cavity

Zhang, Xuezhi; Feng, Ming; Zhang, Xinzheng; Xu, Jingjun

doi:10.1088/2040-8978/14/1/015201

Cited by 3 publications

(2 citation statements)

References 21 publications

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“…Raghunathan et al [89] further demonstrated a mid-IR Raman amplifier based on a bulk Si crystal, which reached a Stokes signal gain of 12 dB at 3.39-μm wavelength when pumped with a pulsed optical parametric oscillator source at 2.88 μm. Despite the advances and several follow-up theoretical investigations [90][91][92], mid-IR Raman lasing based on an on-chip Si platform has not yet been experimentally realized. As an alternative to Si, Raman lasing near 2.0-μm wavelength with an estimated internal quantum efficiency of 12% was achieved in diamond micro-resonators fabricated by transferring a diamond film onto an oxide-coated Si substrate [93].…”

Section: Nonlinear Frequency Generation or Conversionmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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Abstract:The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

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Section: Nonlinear Frequency Generation or Conversionmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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“…The increased recent interest in mid-IR light sources, amplifiers and wavelength converters primarily relate to the high potential application in free space communications, biochemical detection and certain medical procedures [6]. Until now, there are few reports to investigate Raman effects in the mid-IR for silicon waveguides [20,21]. Thus it will be very interesting to investigate the mid-IR Raman amplification and wavelength conversion.…”

Section: Introductionmentioning

confidence: 99%

Mid-infrared Raman amplification and wavelength conversion in dispersion engineered silicon-on-sapphire waveguides

Wang

Liu

Huang

et al. 2013

J. Opt.

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Raman amplification based on stimulated Stokes Raman scattering (SSRS) and wavelength conversion based on coherent anti-Stokes Raman scattering (CARS) are theoretically investigated in silicon-on-sapphire (SOS) waveguides in the mid-infrared (IR) region. When the linear phase mismatch k is close to zero, the Stokes gain and conversion efficiency drop down quickly due to the effect of parametric gain suppression when the Stokes-pump input ratio is sufficiently large. The Stokes gain increases with the increase of k, whereas efficient wavelength conversion needs appropriate k under different pump intensities. The conversion efficiency at exact linear phase matching (k = 0) is smaller than that at optimal linear phase mismatch by a factor of about 28 dB when the pump intensity is 2 GW cm −2 .

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Numerical investigation into the output performance of a silicon Raman laser based on a silicon-on-insulator waveguide pumped by 2 µm lasers

Shao

Wang

et al. 2021

J. Opt. Soc. Am. B

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We numerically analyze the characteristics of a mid-infrared continuous-wave (CW) Raman laser in silicon-on-insulator (SOI) photonics circuits including standing-cavity and ring resonator configurations, which are pumped by lasers at 2 µm. The dependence of cascaded Raman laser performance on the cavity length, effective free carrier lifetime, and the power transmission is investigated for the optimization of CW Raman silicon standing-cavity lasers. In addition, the mid-infrared Raman laser in the ring resonator is also presented under different parameters; in particular, the coupling strengths between the bus waveguide and the ring resonator for both the pump and Raman lasers are crucial to the laser performance. The numerical simulation results also reveal that the position of the coupler for extracting the Raman light from the ring resonator plays an important role in optimizing the structures of such Raman lasers.

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Mid-infrared light generation by high order SRS effect in silicon ring cavity

Cited by 3 publications

References 21 publications

Mid-infrared integrated photonics on silicon: a perspective

Mid-infrared integrated photonics on silicon: a perspective

Mid-infrared Raman amplification and wavelength conversion in dispersion engineered silicon-on-sapphire waveguides

Numerical investigation into the output performance of a silicon Raman laser based on a silicon-on-insulator waveguide pumped by 2 µm lasers

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