Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates

Abstract

Above-room-temperature photoluminescence from a strain-compensated Ge/Si0.15Ge0.85 multiple-quantumwell structure Appl. Phys. Lett. 100, 141905 (2012); 10.1063/1.3700804Room temperature photoluminescence of tensile-strained Ge / Si 0.13 Ge 0.87 quantum wells grown on siliconbased germanium virtual substrate

Components for Integrated Ge on Si for Mid-Infrared Photonic Sensors

“…We are developing a chip scale platform technology using Ge on Si with a range of waveguides, intersubband detectors [3], bolometers, plasmonic antennas [4], ultrafast photonic components [5] and non-linear elements for MIR sensing for healthcare, security and environmental monitoring applications. Here we measure the losses in Ge on Si waveguides between 8 and 11.5 μm wavelength before using a range of Ge plasmonic nano-antennas to undertake third harmonic generation (THG) in the MIR region.…”

Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling

“…After the successful demonstration of modulation based on the quantum-confined Stark effect in strained Ge QWs sandwiched between Ge-rich barrier layers and embedded in PIN diodes [11,12], similar SiGe/Ge multiple-QW structures have been used to demonstrate direct band gap PL originating from type I transitions within the Ge * Corresponding author: wendav@physik.hu-berlin.de wells [13]. Finally, there is ongoing interest in designing SiGe QW structures for intraband transitions for applications not only in QW infrared (IR) photodetectors [14][15][16][17] but also in quantum cascade laser structures [18].…”

Mid-infrared Sensing with Ge on Si Waveguides

“…We have previously demonstrated Ge-on-Si low loss waveguides [5], plasmonic antenna [2], intersubband photodetectors [6] and third harmonic generation [7] using the Ge-on-Si platform in the 8 to 14 µm wavelength mid-infrared region.…”