Mid-Infrared GaAs/AlGaAs Quantum Cascade Lasers Technology

Abstract

The fabrication technology of AlGaAs/GaAs based quantum cascade lasers is reported. The devices operated in pulsed mode at up to 260 K. The peak powers recorded at 77 K were over 1 W for the GaAs/Al0.45Ga0.55As laser without anti-reflection/high-reflection coatings.

Time resolved FTIR study of spectral tuning and thermal dynamics of mid-IR QCLs

“…The structures were mounted epi-side down on a copper heat sink. The details of the processing can be found in reference [8].…”

Multi-step interrupted-growth MBE technology for GaAs/AlGaAs (∼9.4 μm) room temperature operating quantum-cascade lasers

“…There is a wide agreement that changes of the injector doping level in the range of few ten per cents are crucial [1,[4][5][6][7][8][9], though variations of about 10% may be acceptable [2,10].…”

Development of (λ∼9.4µm) GaAs-based quantum cascade lasers

“…The reciprocal space map analyses confirmed the lack of extended defects in the grown structures. The double trench lasers were fabricated using wet etching and Si 3N4 for electrical insulation [5]. The low resistivity NilAuGe/NilAu alloyed ohmic contacts were used at the top of the devices.…”

“…The lasers were cleaved into bars of 0.5, 1 and 2 mm length and soldered with Au/Sn eutectic, epilayer down on diamond heatspreader and copper submounts (Fig.2). The basic electrical and optical characterization was carried in the temperature range from 77 K to 300 K. The properties of the structures strongly depend on n, [4,5]. In low temperature range the rise of n, leads to increase of saturation current (I sat ) as well as threshold current (I th ) , however I sat rises faster.…”

“…Output powers detected for uncoated facet. The detector and the experimental setup as described in ref [2,4,5]…”