Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes

Abstract

Room-temperature electroluminescence is reported from InAsSb multiple-quantum-well light-emitting diodes. The diodes exhibited emission in the mid-infrared peaking near 4 m. The spectral dependence on injection current at 4 K was investigated and two transitions were identified, centered at 4.05 and 3.50 m, which are associated with the eigenstates of the confined holes inside the quantum well. The use of an Sb predeposition and As flux surface exposure during epitaxial growth was observed to have a major effect on the electroluminescence output.

Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO2 detection

“…show greater enhancement values (x10) compared with previous work 24,30 . The output power of the RCLED was measured to be 5.5 µW (external efficiency ≈ 0.024%) at 300 K rising to 45 µW at 77 K. We note that the electroluminescence of our RCLED lies entirely within the CO2 absorption band which coupled with the improved directionality provides a higher level of useful emission intensity compared with previous work 3,5,[13][14][15][16][17][18] .…”

“…Various LED structures have been developed for CO2 monitoring at 4.2 µm [9][10][11][12] , including bulk heterostructures of InAsSbP/InAsSb 13 , AlInSb 14 , InAsSb 15 , as well as InSb/InAs quantum dots 16 , InAs/InAsSb quantum wells and superlattices 3,5,17,18 . These devices typically exhibit 300 K output powers of a few microwatts, with an emittance of ~1-14 mW/cm -2 , but with broadband emission spectra resulting in low available power at the target wavelength.…”

Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy

“…2,4,5 As a ternary alloy it is possible to define the compositional dependence of a parameter T ͑such as E 0 or ⌬ 0 ͒ using T = xB 1 + ͑1−x͒B 2 − x͑1−x͒C, where B 1 is the binary end-point InSb value, B 2 the InAs value, and C a bowing parameter which describes any deviation from the virtual crystal approximation. 6 A range of studies of E 0 in InAs 1−x Sb x indicates that C lies between 570-690 meV [7][8][9] and the review of Vurgaftman et al recommends using C͑E 0 ͒ = + 670 meV.…”

A Novel Solid State Non-Dispersive Infrared CO2 Gas Sensor Compatible with Wireless and Portable Deployment

“…Photonics technology has been used [20,21,23] for producing LED sources and PD detectors operating at mid-infrared wavelengths of interest in gas detection. The technology is based on a pentanary AlGaInAsSb narrow bandgap III-V material combination.…”

“…This paper describes an all solid state, low power consumption, reliable and low cost NDIR CO 2 gas sensor, incorporating LED light sources and photodiode (PD) detectors [20,21], combined with state of the art signal processing matched to use of LED/PD's. LED/PD offer the advantage of low power consumption, high source emittance, fast modulation rates, room temperature operation, fast stabilisation time and brings with it the cost benefits of semiconductor manufacturing techniques [22].…”