Mid-infrared diode lasers for free-space optical communications

ATLAS simulation of a laser diode for free space optical communication (FSOC) in mid-infrared spectral region

“…Figure 6 depicts the variation of the normalized optical output power with bias current density of the laser structure. There is a good agreement between the results obtained on the basis of ATLAS simulation and experimental results reported for the same structure by Yin et al [4]. A larger departure of the simulated results from the experimentally measured values is attributed to the fac− tors mentioned before.…”

“…The current−voltage characteristics obtained on the basis of ATLAS simulation are compared and contrasted with the experimentally values reported by others on the same struc− ture at 100 K [4] and is shown in Fig. 5.…”

“…The device under consideration is based on an N + −InAs 0.61 Sb 0.13 P 0.26 /n 0 −InAs 0.97 Sb 0.03 /P + −InAs 0.61 Sb 0.13 P 0.26 semicon− ductor material system similar to one reported by Yin et al [4]. The schematic of the structure is shown in Fig.…”

“…where CAVITY × LENGHT is the length of cavity of the laser structure, RF and RR are the percentage reflectivity of the front and rear facet, respectively, whose values are taken from [4] and listed in Table 1. Finally, the optical power of the laser structure can be given by [6] …”

“…The continuous room temperature operation of these sources is limited by non−radiative recombination such as Shockley−Read−Hall (SRH) and Auger recombina− tion, which are the dominating recombination mechanisms in narrow bandgap semiconductors, especially at high injec− tion, which prevails in the laser operation. Several experi− mental laser structures have been reported for operation in a 3-5 μm spectral range recently [2][3][4][5] for a number of mid−infrared applications including a free space optical communication. However, rigorous theoretical studies re− ceived comparatively less attention.…”