Mid-infrared characterization of refractive indices and propagation losses in GaSb/AlXGa1−XAsSb waveguides

Roux, Sophie; Barritault, Pierre; Lartigue, Olivier; Cerutti, L.; Tournié, E.; Gérard, Bruno; Grisard, Arnaud

doi:10.1063/1.4934702

Cited by 17 publications

(8 citation statements)

References 7 publications

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“…The parameters used for the simulation were a scattering rate γ, 1×10 13 rad s −1 and the plasma frequency directly obtained from the Brewster mode measurements [25]. The GaSb substrate was described by n GaSb =3.77 [26], and the dielectric permittivity, ε ∞ , of the nanoribbons was used as a free parameter to fit the experimental results.…”

Section: Experimental and Theoretical Methodsmentioning

confidence: 99%

Localized surface plasmon resonance frequency tuning in highly doped InAsSb/GaSb one-dimensional nanostructures

Barho

Гонзалез-Посада

et al. 2016

Nanotechnology

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We report a detailed analysis of the influence of the doping level and nanoribbon width on the localized surface plasmon resonance (LSPR) by means of reflectance measurements. The plasmonic system, based on one-dimensional periodic gratings of highly Si-doped InAsSb/GaSb semiconductor nanostructures, is fabricated by a simple, accurate and large-area technique fabrication. Increasing the doping level blueshifts the resonance peak while increasing the ribbon width results in a redshift, as confirmed by numerical simulations. This provides an efficient means of fine-tuning the LSPR properties to a target purpose of between 8-20 μm (1250-500 cm(-1)). Finally, we show surface plasmon resonance sensing to absorbing polymer layers. We address values of the quality factor, sensitivity and figure of merit of 16 700 nm RIU(-1) and 2.5, respectively. These results demonstrate Si-doped InAsSb/GaSb to be a low-loss/high sensitive material making it very promising for the development of biosensing devices in the mid-infrared.

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Section: Experimental and Theoretical Methodsmentioning

confidence: 99%

Localized surface plasmon resonance frequency tuning in highly doped InAsSb/GaSb one-dimensional nanostructures

Barho

Гонзалез-Посада

et al. 2016

Nanotechnology

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“…The geometrical parameters determined by SEM and AFM measurements were used as input for a finite-element model which allowed to solve Maxwell's equations by the finite difference time domain (FDTD) method using the commercial software FDTD Solutions by Lumerical [36]. For GaSb, we chose a mid-IR refractive index value of n = 3.77 as reported recently [37]. The plasmonic properties of the highly-doped InAs 0.9 Sb 0.1 can be described by the Drude model.…”

Section: Fdtd Modeling and Discussionmentioning

confidence: 99%

Pedestal formation of all-semiconductor gratings through GaSb oxidation for mid-IR plasmonics

Bomers

Barho

Milla-Rodrigo³

et al. 2018

J. Phys. D: Appl. Phys.

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Mid-IR localized surface plasmon resonances (LSPR) have been demonstrated in nano-ribbons of highly Si-doped InAsSb alloys on GaSb substrates. We show that the slow, steady and selective oxidation of GaSb in water leads to an all-semiconductor mid-IR pedestal configuration consisting of highly doped InAsSb plasmonic resonators on top of GaSb pedestals embedded in an amorphous oxide layer. The homogeneity of the pedestal structure is imaged with an attenuated-total reflection Fourier transform infrared (ATR-FTIR) microscope by measuring around the plasmonic excitation at the plasma wavelength of 5.5 µm. As the plasmonic properties are influenced by modifications of the surrounding medium, we show for all-semiconductor gratings with defined doping level and defined grating geometry, that the GaSb oxidation process allows post-fabrication targeting of mid-IR plasmonic resonances to cover the mid-IR range from 5 to 20 µm. Additionally the pedestal formation reduces the refractive index mismatch between the two interfaces of the plasmonic resonators which allows to exploit a second plasmonic peak and which favors plasmonic field enhancement at the top (air-) side of the structure relevant for enhanced molecular vibration spectroscopy.

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“…Undoped GaSb is transparent in the LWIR and we have taken a GaAs substrate because it has a refractive index of 3.27, lower than that of GaSb, which is essential to guide the wave. For GaSb, we use nGaSb = 3.77 based on experimental work by Roux et al [10]. With Figure 2., we show a normal incidence transmission spectrum calculation, in transverse magnetic polarization.…”

Section: Semiconductor Gmrmentioning

confidence: 99%

Long-wave infrared spectral filter with semiconductor materials

et al. 2020

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We present a theoretical study of a nanostructured guided-mode resonant (GMR) spectral filter operating in the long-wave infrared (LWIR) wavelength range. The component is made of III-V semiconductors: heavily n-doped InAsSb for the grating and GaSb for the waveguide of the GMR resonator. In order to study the tolerance for the fabrication process and to adjust the resonance of the filter, a geometric study is also presented.

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Mid-infrared characterization of refractive indices and propagation losses in GaSb/AlXGa1−XAsSb waveguides

Cited by 17 publications

References 7 publications

Localized surface plasmon resonance frequency tuning in highly doped InAsSb/GaSb one-dimensional nanostructures

Localized surface plasmon resonance frequency tuning in highly doped InAsSb/GaSb one-dimensional nanostructures

Pedestal formation of all-semiconductor gratings through GaSb oxidation for mid-IR plasmonics

Long-wave infrared spectral filter with semiconductor materials

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