Mid-Infrared Black Phosphorus Surface-Emitting Laser with an Open Microcavity

Huang, Yuanqing; Ning, Jiqiang; Chen, Hongmei; Xu, Yi‐Jun; Wang, Xu; Ge, Xiaotian; Jiang, Ching-Long; Zhang, Xing; Zhang, Jianwei; Peng, Yong; Huang, Zhiwen; Zhang, Kai; Zhang, Ziyang

doi:10.1021/acsphotonics.9b00096

Cited by 27 publications

(31 citation statements)

References 33 publications

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“…To date, majority of optical studies on BP have been related to spontaneous emission (SPE) from few‐layer structures with the spectral response in the near‐IR to MIR spectral region. [ 18–20 ] Most recently, MIR lasing from lamellar BP thin film layers with random nano‐gaps was reported, which is configured in an open distributed Bragg reflector (DBR) cavity device structure, [ 21 ] However, more solid results are needed to clarify the evolution from amplified SPE to lasing. To be mature for laser application, high crystalline quality of gain medium, temperature robustness, and wavelength tunability of the device usually lie at the heart of their opto‐electronic performance.…”

Section: Figurementioning

confidence: 99%

Wavelength‐Tunable Mid‐Infrared Lasing from Black Phosphorus Nanosheets

et al. 2020

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potential applications in integrated photo nics for onchip optical interconnects, gas sensing, and imaging applications. [4][5][6] Thus far, almost all the reported works are limited to the visible region to near infrared (nearIR) waveband. Pushing the laser wavelength of van der Waals crystalbased nanoemitters further into IR spectral range is of paramount signifi cance for sensing and free space telecom munication technologies. In light of the intriguing prospect, black phosphorus (BP), in recent years, has emerged as a promising material for IRoriented nano photonic applications. This is driven by the facts that BP possesses a layer dependent direct bandgap character, greatly different from other 2D transi tion metal dichalcogenide materials. [7,8] By increasing the thickness of BP from monolayer to bulk, the band gap of BP decreases from ≈1.75 eV to ≈0.3 eV, span ning almost all the near to midIR (MIR) spectral region. [8] More importantly, the unique crystalline structure of BP enables strong inplane anisotropy of both elec trical and optical properties, which can be harnessed for novel physical effects. [9][10][11][12] The high carrier mobility has already demonstrated BP's superiority in a wealth of nanoelectronics devices. [13][14][15][16][17] All these merits render BP an ideal building block for potential applications in integrated electronics and Van der Waals layered semiconductor materials own unique physical properties and have attracted intense interest in developing high-performance electronic and photonic devices. Among them, black phosphorus (BP) is distinct for its layer number-tuned direct band gap which spans from near-to mid-infrared (MIR) waveband. In addition, the puckered honey comb crystal lattice endows the material with highly linear-polarized emission and marked anisotropy in carrier transportation. These unique material properties render BP as an intriguing and promising building block for constructing midinfrared-ranged coherent light sources. Here, a room temperature surfaceemitting MIR laser based on single crystalline BP nanosheets coupled with a distributed Bragg reflector cavity is reported. MIR stimulated emission at 3611 nm is achieved with a near-unity linear polarization, which exhibits robust thermal stability up to 360 K. Most importantly, the lasing wavelength can be tuned from 3425 to 4068 nm by varying the cavity length via thickness control of BP layer. The demonstrated highly polarized lasing output and wavelength-tunable capacity of the proposed device scheme in MIR spectral range opens up promising opportunities for a broad array of applications in polarization-resolved IR imaging, range-finding, and free space quantum communications.

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Section: Figurementioning

confidence: 99%

Wavelength‐Tunable Mid‐Infrared Lasing from Black Phosphorus Nanosheets

et al. 2020

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“…The unique emission properties make thin‐film BP a promising active gain medium in MIR lasing devices. [ 208,209 ] Huang et al reported a BP‐based MIR surface‐emitting laser with an open microcavity architecture, in which the lamellar BP film with air nanogaps were sandwiched between top and bottom SiO 2 /Si 3 N 4 distributed Bragg reflector (DBR) mirrors. [ 208 ] The PL density from lamellar BP is stronger than that from densely squeezed BP flakes, which is attributed to the occurrence of constructive interference induced by periodic air gaps.…”

Section: Mid‐infrared Properties Of Black Phosphorusmentioning

confidence: 99%

“…[ 208,209 ] Huang et al reported a BP‐based MIR surface‐emitting laser with an open microcavity architecture, in which the lamellar BP film with air nanogaps were sandwiched between top and bottom SiO 2 /Si 3 N 4 distributed Bragg reflector (DBR) mirrors. [ 208 ] The PL density from lamellar BP is stronger than that from densely squeezed BP flakes, which is attributed to the occurrence of constructive interference induced by periodic air gaps. [ 208 ] When excitation power exceeds the threshold value (850 mW), the PL spectrum is dominated by sharp stimulated emission at 3765 nm, indicating the realization of BP‐based MIR coherent light sources.…”

Section: Mid‐infrared Properties Of Black Phosphorusmentioning

confidence: 99%

“…[ 208 ] The PL density from lamellar BP is stronger than that from densely squeezed BP flakes, which is attributed to the occurrence of constructive interference induced by periodic air gaps. [ 208 ] When excitation power exceeds the threshold value (850 mW), the PL spectrum is dominated by sharp stimulated emission at 3765 nm, indicating the realization of BP‐based MIR coherent light sources. [ 208 ] In the report of Zhang et al, BP film is embedded in a cavity with periodic SiO/Si films serving as bottom and top DBRs.…”

Section: Mid‐infrared Properties Of Black Phosphorusmentioning

confidence: 99%

“…[ 208 ] When excitation power exceeds the threshold value (850 mW), the PL spectrum is dominated by sharp stimulated emission at 3765 nm, indicating the realization of BP‐based MIR coherent light sources. [ 208 ] In the report of Zhang et al, BP film is embedded in a cavity with periodic SiO/Si films serving as bottom and top DBRs. [ 209 ] The wavelength‐tunable MIR lasing (3425–4068 nm) is realized by varying the thickness of BP film.…”

Section: Mid‐infrared Properties Of Black Phosphorusmentioning

confidence: 99%

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Synthesis Techniques, Optoelectronic Properties, and Broadband Photodetection of Thin‐Film Black Phosphorus

Zhang

Wang

Zhou

et al. 2020

Advanced Optical Materials

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Black phosphorus (BP), a van der Waals (vdW) layered material, has been intensively studied in recent years since the rediscovery of its thin‐film form in 2014. It is considered as a promising material for mid‐infrared (MIR) photodetection, due to its intrinsic narrow bandgap, tunable band properties, decent optical absorption, high room‐temperature mobility, and high compatibility with silicon‐based technology. Here, the recent advances in the synthesis techniques, the novel optoelectronic properties, and applications of thin‐film BP flake in MIR photodetection are reviewed. Over 17 synthesis techniques of BP films, as well as their merits and drawbacks, are summarized and discussed. The recently discovered strain‐, electric‐field‐, and chemical‐doping‐induced bandgap tuning effects in BP effectively extend its optical absorption cutoff wavelength into regime with longer wavelength (>4 µm). In addition, the establishment of BP‐based vdW heterostructures paves a new way to design novel high‐performance MIR photodetectors. BP MIR photodetectors enabled by various photocurrent generation mechanisms (photoconductive, photogating, and photovoltaic effect) and device configurations (transistor‐type, waveguide‐coupled, Schottky‐junction‐type, and heterojunction‐type devices) are summarized and compared.

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Electrostatically Induced Black Phosphorus Infrared Photodiodes

Yan,

Wang,

Xing

et al. 2024

Adv Funct Materials

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Homojunctions are key elements in many mainstream electronic devices. However, conventional dopant‐based “pn” homojunctions are not easily achievable in new material families, such as the 2D materials. Several recent 2D material studies have shown that lateral pn homojunctions can instead be electrostatically induced using back gates localized to either the source or drain contacts. Here, a hBN‐encapsulated black phosphorus dual‐gate device containing a lateral pn homojunction, whose orientation can be switched via application of back gate voltages, is demonstrated. Importantly, this study extends the state‐of‐the‐art for this architecture by characterizing the photoresponse under infrared (λ = 2.2 µm) illumination. It is shown that when biased to form a homojunction, the device exhibits the photovoltaic effect, resulting in a specific detectivity of 8.5 × 108 cm Hz1/2 W−1 at 77 K under short‐circuit conditions, and an open circuit photovoltage up to 175 mV at 77 K. Further, it is shown that the device can be operated in photoconductive mode, allowing a high responsivity of 0.55 A W−1. This device is thus highly reconfigurable as it can be switched between photovoltaic and photoconductive modes of operation to prioritize low noise and fast response or high responsivity.

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Mid-Infrared Black Phosphorus Surface-Emitting Laser with an Open Microcavity

Cited by 27 publications

References 33 publications

Wavelength‐Tunable Mid‐Infrared Lasing from Black Phosphorus Nanosheets

Wavelength‐Tunable Mid‐Infrared Lasing from Black Phosphorus Nanosheets

Synthesis Techniques, Optoelectronic Properties, and Broadband Photodetection of Thin‐Film Black Phosphorus

Electrostatically Induced Black Phosphorus Infrared Photodiodes

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