Mid frequency sputtering — a novel tool for large area coating

Bräuer, Günter; Szczyrbowski, J.; Teschner, G.

doi:10.1016/s0257-8972(97)00516-1

Cited by 56 publications

(10 citation statements)

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“…Hydrogen atom incorporated in the film might have a negative effect on the film hardness. However, the hardness values are comparable to other reported ones in the literature (5.1-9.9 GPa), although the hardness was measured at very small loads (∼ 400 μN) compared to that in our experiment (4 mN) [16,17]. It is well known that the hardness test with a small load results in a larger value [18].…”

Section: Resultssupporting

confidence: 88%

Low temperature deposition of tin oxide films by inductively coupled plasma assisted chemical vapor deposition

Lee

Kim

et al. 2008

Thin Solid Films

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Section: Resultssupporting

confidence: 88%

Low temperature deposition of tin oxide films by inductively coupled plasma assisted chemical vapor deposition

Lee

Kim

et al. 2008

Thin Solid Films

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“…Mid-frequency (100-350 kHz) pulsing of magnetrons became very popular in the 1990s as unwanted arcing was suppressed and the sputtering process could be scaled to very large areas with high deposition rate [56]. Even when high power was used for large areas, sputtered atoms are neutral atoms, not ions.…”

Section: A Brief Look At Some Early Workmentioning

confidence: 99%

A review comparing cathodic arcs and high power impulse magnetron sputtering (HiPIMS)

Anders

2014

Surface and Coatings Technology

236

109

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High power impulse magnetron sputtering (HiPIMS) has been in the center of attention over the last years as it is an emerging physical vapor deposition (PVD) technology that combines advantages of magnetron sputtering with various forms of energetic deposition of films such as ion plating and cathodic arc plasma deposition. It should not come at a surprise that many extension and variations of HiPIMS make use, intentionally or unintentionally, of previously discovered approaches to film processing such as substrate surface preparation by metal ion sputtering and phased biasing for film texture and stress control. Therefore, in this review, an overview is given on some historical developments and features of cathodic arc and HiPIMS plasmas, showing commonalities and differences. To limit the scope, emphasis is put on plasma properties, as opposed to surveying the vast literature on specific film materials and their properties.

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“…The sputtering takes place from the target during a negative voltage pulse (duration of the voltage pulse t 1 ), while discharging of the target surface takes place during a successive positive low-voltage pulse (typically 10 % of the nominal negative voltage). To eliminate the effect of the anode disappearing [5] and to increase the deposition rate, dual magnetron systems are used [6,11,40,41]. In this case, both magnetrons are attached to the same pulse unit.…”

Section: Asymmetric Bipolar Pulsed DC Magnetron Dischargesmentioning

confidence: 99%

“…Besides the aforementioned applicability for the deposition of insulating films [6,11,40,41], dual magnetron systems offer some outstanding advantages also in the production of alloy films and multilayer systems when using different materials for the single targets to be sputtered. The composition of these films can be varied over a wide range by computer-controlled parameters of the pulses generated using a power supply.…”

Section: Dual Magnetron Systemmentioning

confidence: 99%

Pulsed dc Magnetron Discharges and their Utilization in Plasma Surface Engineering

Vlček

Musil

2004

Contrib. Plasma Phys.

119

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Fundamental aspects of magnetron operation in two types of practically interesting discharges, i.e. in highpower unipolar pulsed dc magnetron discharges for ionized high-rate sputtering and in asymmetric bipolar pulsed dc magnetron discharges for reactive sputtering, were investigated on the basis of time-resolved plasma diagnostics. We present the results obtained using time-resolved optical emission spectroscopy and time-and energy-resolved mass spectroscopy in high-power unipolar pulsed dc magnetron discharges at a repetition frequency of 1 kHz, an argon pressure of 1 Pa and an average target power loading in a pulse up to 500 W/cm 2 . The main aim was to study complex ionization mechanisms of sputtered Cu atoms and working gas (Ar) atoms, and to characterize energy distributions of Cu + and Ar + ions and their fractions in ion fluxes to a substrate during pulses. Some results achieved with a grooved target at the frequencies up to 50 kHz are discussed. We report also on the results obtained using energy-resolved mass spectroscopy and time-resolved Langmuir probe measurements in asymmetric bipolar pulsed dc magnetron discharges at repetition frequencies of 100 kHz and 350 kHz, an argon pressure of 0.53 Pa and a mean discharge power of 300 W. They explain a complex correlation between the pulsed plasma dynamics and the enhanced ion bombardment of growing films in these discharges. Some new development trends in the field of the dual pulsed dc magnetron sputtering are outlined.

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Mid frequency sputtering — a novel tool for large area coating

Cited by 56 publications

References 0 publications

Low temperature deposition of tin oxide films by inductively coupled plasma assisted chemical vapor deposition

Low temperature deposition of tin oxide films by inductively coupled plasma assisted chemical vapor deposition

A review comparing cathodic arcs and high power impulse magnetron sputtering (HiPIMS)

Pulsed dc Magnetron Discharges and their Utilization in Plasma Surface Engineering

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