Mid- and Long-Wave Infrared Optoelectronics via Intraband Transitions in PbS Colloidal Quantum Dots

Ramiro, I.; Özdemir, Onur; Christodoulou, Sotirios; Gupta, Shuchi; Dalmases, Mariona; Torre, Iacopo; Konstantatos, Gerasimos

doi:10.1021/acs.nanolett.9b04130

Cited by 66 publications

(69 citation statements)

References 32 publications

(62 reference statements)

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“…Note that this process is no longer limited to mercury chalcogenides and has been recently observed for PbS(e) NCs. [225][226][227] Because the confinement drives absorption spectrum, the largest particles have the reddest absorption. The doping magnitude is also controlled by the confinement through the relative position of the conduction band with respect to the Fermi level, the highest doping is thus achieved for the largest particles.…”

Section: Optical Propertiesmentioning

confidence: 99%

Mercury Chalcogenide Quantum Dots: Material Perspective for Device Integration

et al. 2021

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Nanocrystals (NCs) are one of the few nanotechnologies to have attained mass market applications with their use as light sources for displays. This success relies on Cd-and In-based wide bandgap materials. NCs are likely to be employed in more applications as they provide a versatile platform for optoelectronics, specifically, infrared optoelectronics. The existing material technologies in this range of wavelengths are generally not cost effective, which limits the spread of technologies beyond a few niche domains, such as defense and astronomy. Among the potential candidates to address the infrared window, mercury chalcogenide (HgX) NCs exhibit the highest potential in terms of performance. In this review, we discuss how material developments have facilitated device enhancements. Because such NCs are primarily used because of their infrared optical features, we first review the strategies for the associated colloidal growth and electronic structure. The review is organized considering three main device-related applications: light emission, electronic transport and infrared photodetection.

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Section: Optical Propertiesmentioning

confidence: 99%

Mercury Chalcogenide Quantum Dots: Material Perspective for Device Integration

et al. 2021

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“…When the confined ground state is populated with electrons, intra-band absorption within the conduction band may occur, in which the absorption is attributed to electronic excitation between energy levels smaller than the bandgap. For example, the photon energy absorbed through an intra-band transition can be as low as 0.14 eV, much smaller than the 0.41 eV bandgap of bulk PbS [130].…”

Section: Zero Dimensional Nanocrystalsmentioning

confidence: 97%

“…By exploiting intra-band transitions, the photoresponse of PbS CQDs was extended to longer wavelengths up to 9 μm, which is beyond the intrinsic bandgap of bulk PbS [129,130]. Stable heavy doping is required in such intra-band absorption systems.…”

Section: Zero Dimensional Nanocrystalsmentioning

confidence: 99%

Solution-processable infrared photodetectors: Materials, device physics, and applications

Paramasivam

Vella

et al. 2021

Materials Science and Engineering: R: Reports

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This review is written to introduce infrared photon detectors based on solution-processable semiconductors. A new generation of solution-processable photon detectors have been reported in the past few decades based on colloidal quantum dots, two-dimensional materials, organics semiconductors, and perovskites. These materials offer sensitivity within the infrared spectral regions and the advantages of ease of fabrication at low temperature, tunable materials properties, mechanical flexibility, scalability to large areas, and compatibility with monolithic integration, rendering them as promising alternatives for infrared sensing when compared to vacuum-processed counterparts that require rigorous lattice matching during integration. This work focuses on infrared detection using disordered semiconductors so as to articulate how the inherent device physics and behaviors are different from conventional crystalline semiconductors. The performance of each material family is summarized in tables, and device designs unique to solution-processed materials, including narrowband photodetectors and pixel-less up-conversion imagers, are highlighted in application prototypes distinct from conventional infrared cameras. We share our perspectives in examining open challenges for the development of solution-processable infrared detectors and comment on recent research directions in our community to leverage the advantages of solutionprocessable materials and advance their implementation in next-generation infrared sensing and imaging applications.among many other areas. Commercially available IR detectors are predominantly based on vacuum-processed inorganic compound semiconductors, which are structurally rigid, brittle, and require fabrication via complex epitaxial growth and costly processes. A new generation of solution-processable semiconductors have been reported in the past few decades including colloidal quantum dots (CQDs) [1,8,9], organic semiconductors (OSCs) [4,7,10,11], perovskites [1,12,13], and two-dimensional (2D) materials [5,14]. These materials offer sensitivity within the IR spectral regions and the advantages of ease of fabrication

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“…Byung Ku Jung, Ho Kun Woo, Chanho Shin, Taesung Park, Ning Li, Kyu Joon Lee, Woosik Kim, Jung Ho Bae, Jae-Pyoung Ahn, Tse Nga Ng,* and Soong Ju Oh* DOI: 10.1002/adom.202101611 promising materials for infrared photo detectors because of their sizetunable band gap in the neartomid infrared region, low exciton binding energy, high hole and electron mobilities, and lowtem perature solutionbased processability. [1][2][3] To date, PbS QD infrared photodetectors have been developed with various devices such as phototransistors, [4][5][6] photocon ductors, [7][8][9][10] and photodiodes (PDs). [3,[11][12][13][14][15][16][17][18] In particular, recent studies have focused on PbS quantum dot photodiode (QDPD) structures because of their high energy conversion efficiency [18][19][20] and high response speed.…”

Section: Suppressing the Dark Current In Quantum Dot Infrared Photodetectors By Controlling Carrier Statisticsmentioning

confidence: 99%

Suppressing the Dark Current in Quantum Dot Infrared Photodetectors by Controlling Carrier Statistics

Jung

Woo

Shin

et al. 2021

Advanced Optical Materials

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Lead sulfide colloidal quantum dot photodiodes (PbS QDPDs) exhibit a high energy conversion efficiency for infrared detection. Despite the high photoinduced current, the performance of PbS QDPDs is limited by the high dark current which is rarely investigated. Understanding the dark current in PbS QDPDs is critical to improving the detectivity of PbS QDPDs. Herein, it is demonstrated that minority carriers of I‐passivated PbS films and trap sites of EDT‐passivated PbS films are related to the dark current of PbS QDPD. Utilizing annealing and low‐temperature ligand exchange processes, the dark current density can be decreased almost tenfold by suppressing the minority carrier diffusion in the PN junction and trap‐assisted charge injection from the electrode. PN junction simulation, space charge limited current measurements, as well as structural, optical, and chemical characterizations are conducted to elucidate the origins of the dark current suppression. The authors achieve the lowest dark current density of 2.9 × 10−5 mA cm−2 at −1 V among PbS‐based QDPDs and a high detectivity of 6.7 × 1012 Jones at 980 nm. It is believed that this work provides fundamental understanding of carrier statistics in nanomaterials and device performance as well as a technological basis for realizing low‐cost high‐performance optoelectronic devices.

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Mid- and Long-Wave Infrared Optoelectronics via Intraband Transitions in PbS Colloidal Quantum Dots

Cited by 66 publications

References 32 publications

Mercury Chalcogenide Quantum Dots: Material Perspective for Device Integration

Mercury Chalcogenide Quantum Dots: Material Perspective for Device Integration

Solution-processable infrared photodetectors: Materials, device physics, and applications

Suppressing the Dark Current in Quantum Dot Infrared Photodetectors by Controlling Carrier Statistics

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