Microwave Zero-Resistance States in a Bilayer Electron System

Wiedmann, Steffen; Gusev, G. M.; Raichev, O. É.; Bakarov, A. K.; Portal, J. C.

doi:10.1103/physrevlett.105.026804

Cited by 71 publications

(86 citation statements)

References 22 publications

(48 reference statements)

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“…Due to charge redistribution in WQW's, there are two layers near the interfaces, separated by an electrostatic potential barrier, which create a symmetric tunnel-coupled bilayer electron system with two populated 2D subbands closely spaced in energy. 10 Despite a complex photoresponse in bilayer systems, the smaller period of MIS oscillations 11 compared to the MIRO period permits us a direct visualization of the quantum component of magnetoresistance that is affected by microwaves. This fact might be considered as an experimental advantage compared to a 2DES with only one occupied subband.…”

Section: Introductionmentioning

confidence: 99%

“…Microwave-induced resistance oscillations have been found in bilayer and trilayer systems, 8,9 and high-mobility bilayers with two occupied 2D subbands exhibit ZRS. 10 The specific features in magnetoresistance in bilayers and multilayers are caused by an interference of magneto-intersubband (MIS) oscillations 11 with MIRO's, when MW irradiation enhances, suppresses, or inverses the MIS oscillations.…”

Section: Introductionmentioning

confidence: 99%

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Microwave-induced Hall resistance in bilayer electron systems

Wiedmann

Gusev

Raichev³

et al. 2011

Phys. Rev. B

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The influence of microwave irradiation on dissipative and Hall resistance in high-quality bilayer electron systems is investigated experimentally. We observe a deviation from odd symmetry under magnetic-field reversal in the microwave-induced Hall resistance R xy , whereas the dissipative resistance R xx obeys even symmetry. Studies of R xy as a function of the microwave electric field and polarization exhibit a strong and nontrivial power and polarization dependence. The obtained results are discussed in connection to existing theoretical models of microwave-induced photoconductivity.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Microwave-induced Hall resistance in bilayer electron systems

Wiedmann

Gusev

Raichev³

et al. 2011

Phys. Rev. B

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“…The MIROs have been found also in bilayer and trilayer electron systems [3], where they interfere with magneto-intersubband (MIS) oscillations [4] because of the presence of more than one populated subband. Recently, it has been demonstrated [5] that ZRS exist in bilayer systems despite of additional intersubband scattering. Stimulated by experimental findings, theorists have proposed several microscopic mechanisms which reasonably explain non-linear transport caused by microwave excitation [6][7][8][9].…”

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confidence: 99%

Evidence for zero-differential resistance states in electronic bilayers

Gusev

Wiedmann

Raichev³

et al. 2011

Phys. Rev. B

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We observe zero-differential resistance states at low temperatures and moderate direct currents in a bilayer electron system formed by a wide quantum well. Several regions of vanishing resistance evolve from the inverted peaks of magneto-intersubband oscillations as the current increases. The experiment, supported by a theoretical analysis, suggests that the origin of this phenomenon is based on instability of homogeneous current flow under conditions of negative differential resistivity which leads to formation of current domains in our sample, similar to the case of single-layer systems.PACS numbers: 73.43. Qt, 73.63.Hs, Studies of non-linear transport in high-quality twodimensional electron system (2DES) have revealed many interesting phenomena which occur in a perpendicular magnetic field at large filling factors. In the presence of AC excitation by microwaves, there exist microwaveinduced resistance oscillations (MIROs) [1] which obey the periodicity ω/ω c , where ω and ω c are the radiation frequency and the cyclotron frequency, respectively. The minima of these oscillations evolve into zero-resistance states (ZRS) for high electron mobility and elevated microwave power [2]. The MIROs have been found also in bilayer and trilayer electron systems [3], where they interfere with magneto-intersubband (MIS) oscillations [4] because of the presence of more than one populated subband. Recently, it has been demonstrated [5] that ZRS exist in bilayer systems despite of additional intersubband scattering. Stimulated by experimental findings, theorists have proposed several microscopic mechanisms which reasonably explain non-linear transport caused by microwave excitation [6][7][8][9].A direct current (DC) excitation of high-quality 2DES leads to another group of non-linear phenomena caused by Landau quantization and, therefore, distinct from electron heating effects observed under similar conditions in samples with lower mobilities. The Hall-field induced resistance oscillations (HIROs) are found in numerous experiments [10][11][12][13] and are explained [10,14] in terms of large-angle elastic scattering between Landau levels (LLs) tilted by the Hall field. Further, even a moderate DC causes a considerable decrease of the resistance [15], which in high-quality samples may lead to the zero differential resistance phenomenon. The zero-differential resistance states (ZdRS) found in single-layer systems emerge either from the inverted maxima of Shubnikov-de Haas (SdH) oscillations at relatively high magnetic fields [16] or from a minimum of HIROs [17]. In the second case ZdRS appears at low magnetic fields, before the onset of SdH oscillations, and extends over a continuous range of fields. The two seemingly different regimes, however, are explained within the same model assuming formation of current domains when the negative resistance conditions are reached and homogeneous current picture becomes unstable [18]. In order to learn more about the origin of ZdRS, clear understanding of the domain model is required. In thi...

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“…and associated zero-resistance states 3,4 are prime examples of nonequilibrium transport phenomena, [5][6][7][8][9][10][11][12][13] which occur in high mobility two-dimensional electron systems (2DES) subject to a weak perpendicular magnetic field, B ⊥ . Owing to both theoretical [14][15][16][17][18][19][20][21][22] and experimental [22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41] progress, our understanding of these phenomena has improved dramatically over the last decade.…”

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confidence: 99%

Microwave-induced resistance oscillations in tilted magnetic fields

et al. 2012

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We have studied the effect of an in-plane magnetic field on microwave-induced resistance oscillations in a high mobility two-dimensional electron system. We have found that the oscillation amplitude decays exponentially with an in-plane component of the magnetic field $B_\parallel$. While these findings cannot be accounted for by existing theories, our analysis suggests that the decay can be explained by a $B_\parallel$-induced correction to the quantum scattering rate, which is quadratic in $B_\parallel$

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Microwave Zero-Resistance States in a Bilayer Electron System

Cited by 71 publications

References 22 publications

Microwave-induced Hall resistance in bilayer electron systems

Microwave-induced Hall resistance in bilayer electron systems

Evidence for zero-differential resistance states in electronic bilayers

Microwave-induced resistance oscillations in tilted magnetic fields

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