Microwave Variable-Gain Amplifier with Dual-Gate GaAs FET

Maeda, M.; Minai, Y.

doi:10.1109/tmtt.1974.1128468

Cited by 14 publications

(2 citation statements)

References 3 publications

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“…Dual-gate FETs are one possible implementation of a variable-gain amplifier [1][2][3] and can be made to have constant phase [4-71. They possess two gates: an R F gate and a control gate.…”

Section: Approachmentioning

confidence: 99%

A variable‐gain constant‐phase dual‐gate amplifier with series feedback

Willems¹,

Bahl²,

Pollman³

et al. 1990

Micro & Optical Tech Letters

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This paper presents series feedback used in a variable‐gain constant‐phase dual‐gate amplifier for T / R module applications. The inductive series feedback element shifts the input match of the dual gate FET to an impedance that is much easier to match 50 ohms. This allows the amplifier to have a much broader bandwidth and increased gain while maintaining constant phase in the different gain states. This amplifier was fabricated as a MMIC chip using the ITT MSAG process, and we obtained excellent performance: variable gain range of 13 dB, VSWR better than 2.0:1, phase variation less than ±2°, and gain flatness of ±0.4 dB over the 4.5‐6‐GHz frequency range.

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“…Dual-gate FETs are one possible implementation of a variable-gain amplifier [1][2][3] and can be made to have constant phase [4-71. They possess two gates: an R F gate and a control gate.…”

Section: Approachmentioning

confidence: 99%

A variable‐gain constant‐phase dual‐gate amplifier with series feedback

Willems¹,

Bahl²,

Pollman³

et al. 1990

Micro & Optical Tech Letters

View full text Add to dashboard Cite

show abstract

“…With the availability of gallium arsenide field-effect transistors (GaAs MESFETs), the same approach has been investigated at microwave frequencies and several variable gain amplifiers (VGAs) with dual-gate MESFETs have been designed, e.g. [1] - [3]. However, in these circuits the relation between gain and control voltage is nonlinear and depends on bias, temperature, and active device process variations.…”

Section: Introductionmentioning

confidence: 99%