Deliberately modulating the surface structure of oxide semiconductor materials was crucial to improve their photoelectronic conversion performance. Here, surface engineering of a Cu 2 O-based semiconductor (cubic particles in an average size of 300 nm) by redox embedding Rh with RhCl 63− was attempted to get a series of Rh−Cu 2 O catalysts, and their photocatalytic properties were typically surveyed from dye (methyl orange, MO) photodegradation. With comprehensive characterizations, it was demonstrated that the highly dispersed and tightly integrated Rh−Cu 2 O interface, featuring oxidatively bonded Rh in surface layers of the Cu 2 O substrate, was well constructed by adjusting Rh loading from 0.04 to 0.38 wt %, exhibiting an obvious enhancement in photocatalytic performance for MO degradation compared to bare Cu 2 O. The measurements from photoproduction of H 2 , photocurrent, electrochemical impedance, and scavengers-present tests further illuminated that the Rh species bonded on the Cu 2 O surface in an electron-deficiency state and greatly contributed to not only improving separation efficiency of photogenerated electron/hole pairs, but also lowering the resistance to speed charge transferring along the Rh−Cu 2 O interface, resulting in the enhanced photocatalytic performance of Rh−Cu 2 O catalysts. In addition, the photocatalytic principle of Rh− Cu 2 O catalysts for dye degradation was also discussed. These results indicated that oxidatively bonded metal species in surface layers of Cu 2 O was feasible for getting an efficient charge-separation−transferring M−Cu 2 O interface to improve the photoelectronic conversion performance, which could be referred to as a notable system to directly engineer a semiconductor surface for advanced photoenergy applications.