Microwave Synthesis and High‐Mobility Charge Transport of Carbon‐Nanotube‐in‐Perovskite Single Crystals

Abstract

Organolead trihalide perovskites have emerged as a new class of competitive solution‐processed semiconductors due to their unique optoelectronic properties. However, poor ambient stability and charge transport are the Achilles’ heel of hybrid perovskites, thus limiting their applications. In this work, microwave‐assisted synthesis is applied for the first time to rapidly grow perovskite single crystals embedded with single‐wall carbon nanotubes. These nanotube‐in‐perovskite single crystals are endowed with a carrier mobility one order of magnitude higher than the pure counterpart and the related photodetectors show an ultrafast photo‐response speed (5 and 80 ns for rise and decay time, respectively). The fast and uniform heating of microwave irradiation facilitates the synthesis of ambient‐stable crystals with nanoscale additives, paving the way to creating a wide range of mixed‐dimensional perovskite‐based nanocomposites with optimal properties and device performance.

Coupled Current Jumps and Domain Wall Creeps in a Defect‐Engineered Ferroelectric Resistive Memory

“…SCLC has been often used to describe the electric conducting behavior of insulators/semiconductors, where the trapping centers produced by the defects could capture a fraction of the injected carriers and thus affect the electrical transport process (as shown schematically in the inset of Figure 2a), similar to that in vacuum diode. [33][34][35] In this model, the shape of the I-V characteristics can be divided into four regions: i) an Ohmic region at low-voltages where I is proportional to V; ii) charge trap-distributed region with a slope of 2-3; iii) with increasing the voltage more and more traps are filled and there is a nearvertical regime corresponding to trap-filled limit (TFL) law; iv) the traps are filled and enters into the trap-free regime with a slope of ≈m (≥2). These different regimes have been observed in SBFO devices as shown in Figure 2a-c, where the I-V curve plotted in logarithmic scale confirms the SCLC mechanism and indicates a vital role of defect traps in producing the current jumps.…”

32.2: Invited Paper: Embedding PbS Quantum Dots (QDs) in MAPbCl0.5Br2.5 Perovskite Single Crystal for Near‐infrared Detection

“…Due to high barriers between perovskite and PbS QDs, a tunnelling mechanism is expected to provide channels for charge injection from the photoexcited dots into the surrounding perovskite matrix. (12,14,29) Under the influence of the defect state levels, the transition energy level of a perovskite could be used to transfer charge carriers. Meanwhile, thermionic emission can promote charge carriers transfer among the transition energy level of a perovskite.…”

Luminescence Change from Orange to Blue for Zero‐Dimensional Cs2InCl5(H2O) Metal Halides in Water and a New Post‐doping Method

“…synthesized Cs 2 InCl 5 (H 2 O) crystals by the method that reactant were heated up to 600 °C for 60 h with blue emission [8] . There are many other ways for synthesizing perovskites, such as anti‐solvent method, [9] ultrasonic method, [10] microwave radiation method and so on [11] . Besides, to achieve additional tunable physical and chemical properties, doping impurity ions is an effective approach to induce new luminescence centers [12] .…”