Microwave properties of zinc, barium and lead borosilicate glasses

Wu, Jenn‐Ming; Huang, Hong-Lin

doi:10.1016/s0022-3093(99)00513-x

Cited by 127 publications

(90 citation statements)

References 7 publications

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“…The deformation temperature of the ZBS glass, i.e., the temperature at the maximum value of thermal expansion curve, was determined as 588°C, which was similar with the value in the literature; it of zinc borosilicate glass with the composition of 60ZnO-30B 2 O 3 -10SiO 2 (in mol%, Zn60B30Si10) was reported as 582°C by Wu et al [13]. They also determined the dielectric constant (ɛ r ), the Q×f value, and the temperature coefficient of resonant frequency (τ f ) of this glass as 7.56, 1 439 GHz (93 at 15.5 Hz), and −21 ppm/°C, respectively.…”

Section: Zbs Glass-doped Bi(nb 07 Ta 03 )O 4 Ceramicssupporting

confidence: 77%

“…The relatively low Q×f values under 5,000 GHz in this work supports this suggestion. For a material having high quality factor and low dielectric loss, it is necessary to reduce the attenuation constant; it is known that the anharmonicity in the lattice vibration affects the attenuation constant for perfect crystals (i.e., intrinsic loss) whereas dislocations, pores, defects, grain boundaries, and secondary phases have an influence on the attenuation constant for poly-crystals (i.e., extrinsic loss) [22,23]. In general, the amounts of pores and grain boundaries decrease with increasing of the density and then dielectric losses are reduced.…”

Section: Wt% Zbs Glass-doped Bi(nb 1−x Ta X )O 4 Ceramicsmentioning

confidence: 99%

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Low-temperature sintering and dielectric properties of the Bi(Nb1−x Ta x )O4 system

Kim

et al. 2007

J Electroceram

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Low-temperature sintering and dielectric properties of the Bi(Nb 1−x Ta x )O 4 (x=0.1, 0.3, and 0.5) system was investigated as a function of the zinc borosilicate (ZBS) glass content with a view to applying this system to LTCC technology. The addition of 7 wt% ZBS glass ensured a successful sintering below 900°C. The complete solid solution of Bi(Nb, Ta)O 4 with an orthorhombic structure was formed and the high temperature form of Bi(Nb, Ta)O 4 with a triclinic structure was not observed. The second phase of Bi 2 SiO 5 was observed for all compositions. The non-relative liquid phase sintering (NLPS) occurred and the one-stage sintering was conducted. The Q×f values were improved by the addition of Ta. Bi(Nb 0.7 Ta 0.3 )O 4 with 7 wt% ZBS glass sintered at 900°C demonstrated 35.8 in the dielectric constant (ɛ r ), 2,200 GHz in the quality factor (Q×f 0 ), and −48 ppm/°C in the temperature coefficient of resonant frequency (τ f ).

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Section: Zbs Glass-doped Bi(nb 07 Ta 03 )O 4 Ceramicssupporting

confidence: 77%

Section: Wt% Zbs Glass-doped Bi(nb 1−x Ta X )O 4 Ceramicsmentioning

confidence: 99%

Low-temperature sintering and dielectric properties of the Bi(Nb1−x Ta x )O4 system

Kim

et al. 2007

J Electroceram

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“…This high and positive value of τε for BZT with glass phase added, could be attributed to the dielectric properties of the glass phase addition. It is indeed well known that these phases generally have a high and positive value of τε [15].…”

Section: Addition Of Glass Phasesmentioning

confidence: 95%

Disminución drástica de la temperatura de sinterización del Ba (Zn1/3Ta2/3) O3 mediante la adición de una fase vítrea y sales de litio.

Chaouchi¹,

Astorg²,

Aliouat³

2011

Bol. Soc. Esp. Ceram. Vidr.

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The complex perovskite oxide Ba(Zn 1/3 Ta 2/3 )O 3 (BZT) has been studied for its attractive dielectric properties which make this material interesting for applications such as multilayer ceramics capacitors or hyperfrequency resonators. Nevertheless, BZT ceramic requires high temperature to be correctly sintered (@1450°C), that is too high to envisage a silver co-sintering (T f (Ag) = 961°C). For this reason, the lowering of the sintering temperature of BZT by glass phase's additions has been investigated. This material is sinterable at low temperature with combined glass phase -lithium salt additions, and exhibits, at 1MHz very low dielectric losses combined with relatively high dielectric constant and a good stability of this later versus temperature. The 5 wt% of ZnO-SiO 2 -B 2 O 3 glass phase and 1 wt% of LiF added BZT sample sintered at 900°C exhibits a relative density higher than 95% and attractive dielectric properties: a dielectric constant ε r of 32, low dielectrics losses (tan (δ)< 10 -3 ) and a temperature coefficient of permittivity τ ε of -10ppm/°C. Their good dielectric properties and their compatibility with silver electrodes, make these ceramics suitable for L.T.C.C applications. Se ha estudiado el óxido complejo con estructura tipo perovskita Ba (Zn 1/3 Ta 2/3 ) O 3 (BZT). Sus atractivas propiedades dieléctricas le hacen muy interesante para aplicaciones como condensadores cerámicos multicapa o resonadores de microondas. No obstante, los cerámicos de BZT requieren temperaturas de sinterización superiores a 1450 ° C, que es muy alta para abordar un proceso de co-sinterización con electrodos de plata (T f (Ag) = 961 ° C). Para ello, se ha estudiado la bajada de la temperatura de sinterización del BZT mediante la adición de una fase vítrea. La suma combinada de la fase vítrea y la sal de litio lleva la sinterización de este material a temperaturas bajas. Las propiedades dieléctricas presentan pérdidas muy bajas, constante dieléctrica relativamente alta a 1MHz y buena estabilidad frente a la temperatura. La adición del 5% en peso de una fase vítrea de ZnO-B 2 O 3 -SiO 2 y el 1% en peso de LiF disminuye la temperatura de sinterización del BZT hasta 900° C presentando una densidad relativamente alta (> 95%) y las propiedades dieléctricas de interés: la constante dieléctrica de 32, bajas pérdidas dieléctricas (tan (δ) <10 -3 ) y un coeficiente de temperatura de la permitividad τ ε de -10ppm / ° C. Las propiedades dieléctricas obtenidas y la compatibilidad con los electrodos de plata hacen esta cerámica adecuada para su aplicación como LTTC.Palabras clave: Cerámica, vidrio , sinterización, Ba (Zn 1/3 Ta 2/3 )O 3 , propiedades dieléctricas, temperatura de sinterización baja.

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“…1) exist, which show sufficiently high ε r and Qf , in combination with a small positive τ f . The τ f values are optimal for the use in glass-ceramic materials, as the residual glassy phase generally has a negative τ f [1,9] and both phases can thereby compensate to an overall τ f close to zero.…”

Section: Motivation For the Choice Of The Lamentioning

confidence: 99%

Microwave properties and structure of La–Ti–Si–B–O glass-ceramics for applications in GHz electronics

Braun

Mehmood

Hovhannisyan

et al. 2017

Journal of the European Ceramic Society

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Microwave properties of zinc, barium and lead borosilicate glasses

Cited by 127 publications

References 7 publications

Low-temperature sintering and dielectric properties of the Bi(Nb1−x Ta x )O4 system

Low-temperature sintering and dielectric properties of the Bi(Nb1−x Ta x )O4 system

Disminución drástica de la temperatura de sinterización del Ba (Zn<sub>1/3</sub>Ta<sub>2/3</sub>) O<sub>3</sub> mediante la adición de una fase vítrea y sales de litio.

Microwave properties and structure of La–Ti–Si–B–O glass-ceramics for applications in GHz electronics

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