Microwave properties of ferroelectric film planar varactors

Kozyrev, A. B.; Keis, V. N.; Buslov, O.; Ivanov, Alexey; Soldatenkov, O.; Loginov, V. E.; Taricin, A.; Graul, J. S.

doi:10.1080/10584580108012897

Cited by 9 publications

(5 citation statements)

References 5 publications

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“…Experimental voltage capacitance characteristics for planar ferroelectric varactors [6,7] and a substrate temperature of T S = 900 • C [8]. The film thickness is about 0.8 µm.…”

Section: Methodsmentioning

confidence: 99%

Conservation of Permittivity and Tunability of Ferroelectrics Over Temperature

Prudan

Kozyrev

Zemtsov

et al. 2003

Integrated Ferroelectrics

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The existence of an intersection point of electric field strength dependencies of permittivity of ferroelectrics at different temperatures is theoretically described by Ginzburg-Devonshire (GD) theory and experimentally confirmed by studying (Ba 0.3 Sr 0.7 )TiO 3 (BSTO) and SrTiO 3 (STO) thin film varactors. GD analysis enables one to propose a way to improve the thermal stability of ferroelectric microwave devices. In particular, parameters of a L-band digital (0 • /180 • ) phase-shifter fabricated from thick BSTO film varactors were stabilized in the temperature range T = (210-310) K by application of variable to DC control voltages.

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“…Experimental voltage capacitance characteristics for planar ferroelectric varactors [6,7] and a substrate temperature of T S = 900 • C [8]. The film thickness is about 0.8 µm.…”

Section: Methodsmentioning

confidence: 99%

Conservation of Permittivity and Tunability of Ferroelectrics Over Temperature

Prudan

Kozyrev

Zemtsov

et al. 2003

Integrated Ferroelectrics

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“…Measurements of planar capacitors microwave parameters (capacitance C and dielectric losses tan δ) were produced by resonators based on symmetrical stripline at f ≈ 1 GHz [7] and suspended stripline at f ≈ 8 GHz [1] in the (170 ÷ 370) K temperature range. The applied DC voltage was varied from zero up to U max = 300 V, that corresponded to electrical field strength in the gap of the capacitor E ≈ U/g ≈ (0 ÷ 50) V/µm.…”

Section: Methodsmentioning

confidence: 99%

“…Investigations of nonlinear dielectric behavior and microwave losses of ferroelectric bulk ceramics and thin films have demonstrated the potential of these materials for microwave applications for frequency range up to 60 GHz [1][2][3]. Today ferroelectric microwave elements operating at room temperature are designed based most of all on BaSrTiO 3 (BSTO) films which have rather high dielectric nonlinearity and low dielectric losses at operating temperature [4,5] in comparison with another ferroelectric materials.…”

Section: Introductionmentioning

confidence: 99%

Microwave Properties of Thin BSTO Films Based Varactors for High Frequency Applications

Razumov

Tumarkin

Gagarin

et al. 2003

Integrated Ferroelectrics

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The influence of film thickness on electrophysical properties of planar varactors based on ion-plasma deposited BaSrTiO 3 films is investigated. Planar capacitors with copper electrodes were used for tunability and loss factor investigation. Microwave parameters of varactors based on BaSrTiO 3 films were measured at (1 ÷ 8) GHz frequency range and (170 ÷ 370) K temperature range. The tunability and loss factor was found to be strongly depended on film thickness. The optimal thickness of BaSrTiO 3 film from high tunability and low loss factor point of view was estimated as 1 µm approximately. Dielectric losses at frequency range (1 ÷ 8) GHz (tan δ ∼ 0,01 at 1 GHz, tanδ ∼ 0,014 at 8 GHz and zero bias) and high tunability (Cmax/Cmin ∼ 2) at room temperature were observed.

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“…1. The main microwave parameters of presented sandwich varactors were measured by resonant methods developed earlier [5]. Copper top electrodes (thickness ~1 µm) were fabricated on the surface of ferroelectric film and play the role of contact pads for bias voltage applied.…”

Section: Ferroelectric Thin Film Sandwich Varactorsmentioning

confidence: 99%