Microwave photoresistance in an ultra-high-quality GaAs quantum well

Shi, Q.; Studenikin, Sergei; Zudov, M. A.; Baldwin, K. W.; Pfeiffer, Loren; West, Kenneth D.

doi:10.1103/physrevb.93.121305

Cited by 15 publications

(13 citation statements)

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“…6 cm 2 /V s, which, to our knowledge, is the largest value ever reported in any system [48,49]. The intercept of the fit with 1/B = 0 gives τ /τ π ≈ 0.36, implying that backscattering of SB1 electrons provides an essential fraction of the total transport scattering rate.…”

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confidence: 74%

Hall field-induced resistance oscillations in a tunable-density GaAs quantum well

et al. 2017

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We report on Hall field-induced resistance oscillations (HIRO) in a 60 nm-wide GaAs/AlGaAs quantum well with an in situ grown back gate, which allows tuning the carrier density n. At low n, when all electrons are confined to the lowest subband (SB1), the HIRO frequency, proportional to the product of the cyclotron diameter and the Hall field, scales with n −1/2 , as expected. Remarkably, population of the second subband (SB2) significantly enhances HIRO, while their frequency now scales as n −1 . We demonstrate that in this two-subband regime HIRO still originate solely from backscattering of SB1 electrons. The unusual density dependence occurs because the population of SB2 steadily increases, while that of SB1 remains essentially unchanged. The enhancement of HIRO manifests an unexpected, step-like increase of the quantum lifetime of SB1 electrons, which reaches a record value of 52 ps in the two-subband regime.Continuous developments [1][2][3][4][5][6][7][8] in the molecular beam epitaxy and heterostructure design of 2D electron systems (2DES) have led to discoveries of a plethora of novel phenomena, especially in the field of low-temperature magnetotransport. Apart from the extremely rich quantum Hall physics in strong magnetic fields [9,10], high-mobility 2DES display many prominent transport phenomena in low fields. Two salient examples of such phenomena are microwave-(MIRO) [11][12][13][14][15][16] and Hall field-induced resistance oscillations (HIRO) [17][18][19][20][21][22][23][24][25][26] which emerge when a 2DES is driven by microwave radiation and direct current, respectively.HIRO emerge due to elastic electron transitions between Landau levels, tilted by the Hall field, as a result of backscattering off short-range impurities [17,27,28]. The probability of these transitions is maximized each time the Hall voltage drop across the cyclotron diameter matches an integer multiple of the cyclotron energy. As a result, the differential resistivity acquires a 1/B-periodic correction δr which can be described by [27] where ρ 0 = m ⋆ /e 2 nτ is the resistivity at zero magnetic field B, m ⋆ ≈ 0.07m 0 is the effective mass, n is the electron density, λ = exp(−π/ω c τ q ) is the Dingle factor, ω c = eB/m ⋆ is the cyclotron frequency, and τ, τ π , τ q are transport, backscattering, and quantum lifetimes, respectively [29]. The HIRO frequency (inverse period) B 1 is given bywhere E = Bj/ne is the Hall field and R c = √ 2πn/eB is the cyclotron radius.It is well known that in systems with several populated subbands, MIRO and HIRO often mix with magnetointersubband oscillations (MISO) [30][31][32][33][34][35][36]. However, it is also important to examine how MIRO and HIRO are affected by the population of the second subband in the absence of such mixing. For example, capacitance measurements in a wide quantum well provided direct evidence of microwave-induced non-equilibrium redistribution of electrons between two subbands but no significant change in MIRO upon second subband population [37]. However, unlike MIRO, who...

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confidence: 74%

Hall field-induced resistance oscillations in a tunable-density GaAs quantum well

et al. 2017

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“…This subtle effect was not taken into account by the scientific community and not much attention was paid. Nevertheless, and unexpectedly as well, there has been recently presented new experimental results presenting a similar beating pattern on MIRO at very low B too. It was recently proposed a possible physical explanation for such a beating pattern: this microwave‐induced beating patter indicates the presence of coupling between two oscillatory contributions, one is a system of electron Landau states harmonically driven by radiation and the other is a collective motion of the lattices ions, i.e., an acoustic phonon mode.…”

Section: Introductionmentioning

confidence: 59%

Section: Introductionmentioning

confidence: 76%

“…But what is even more shocking is the different behavior in terms of the phase reversal of R xx oscillations when crossing a beat according to both experimental results presented to date . The former does not show any phase reversal, however the latter presents a phase reversal of π . In this article we try to explain this apparent contradictory behavior based on the radiation driven electron orbit model, considering that the electron Landau states‐phonon coupling can be different depending on the relative amplitudes of the oscillatory modes involved (driven‐landau states mode and an acoustic phonon mode).…”

Section: Introductionmentioning

confidence: 76%

“…Now we extend the previous model to explain the controversy consisting in the different behaviors that the experimental results reveal on the issue of phase reversal through the beat. The first experiment on the beat did not show any phase reversal but in the latter there was a very clear phase reversal of π when crossing the beat. From the theoretical standpoint, according to our model there must be always such a phase reversal whenever one beat or node is crossed.…”

Section: Theoretical Modelmentioning

confidence: 86%

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Plasmon–Phonon Coupling in Radiation‐Induced Resistance Oscillations: Beating Pattern and Phase Reversal

Iñarrea

2019

Physica Status Solidi (b)

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This article presents a theoretical study on the experimental observation of two different kinds of beating patterns in the microwave-induced resistance oscillations at very low magnetic field in a high mobility two-dimensional electron system. In the first pattern there was no phase reversal through the beat, however, the latter experiments present a clear phase reversal of π. Based on a model that considers that the beating pattern is produced as a result of the coupling between a system of electron Landau states harmonically driven by radiation and an acoustic phonon mode, the contradictory results are explained through a different intensity coupling in terms of amplitude. In the scenario of the non-phase-reversal case, the dependence on radiation frequency and temperature is studied as well as the possibility of observation of more than one beat by lowering temperature and microwave power. It is concluded that both results can be explained with the same theoretical model that in turn is based on the microwave-driven electron orbit model that was previously developed to explain microwave-induced resistance oscillations.however the latter [33] presents a phase reversal of π. In this article we try to explain this apparent contradictory behavior based on

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Electronic structure of two-dimensional electron gases at differently prepared indium arsenide surfaces

Kołodziej

Wutke

Lis

et al. 2021

Applied Surface Science

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Microwave photoresistance in an ultra-high-quality GaAs quantum well

Cited by 15 publications

References 50 publications

Hall field-induced resistance oscillations in a tunable-density GaAs quantum well

Hall field-induced resistance oscillations in a tunable-density GaAs quantum well

Plasmon–Phonon Coupling in Radiation‐Induced Resistance Oscillations: Beating Pattern and Phase Reversal

Electronic structure of two-dimensional electron gases at differently prepared indium arsenide surfaces

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