Microwave photoconductance decay measurements of n- and p-type silicon irradiated with neutrons and protons

Baek, Hani; Kwon, Gihyun; Nam, Ji-Hyun; Kim, Sang Eun; Kim, Hyoungtaek; Park, Byung-Gun; Lee, Jung-Il; Kang, M. S.; Sun, Gwang Min; Shin, Changsoo

doi:10.1016/j.radphyschem.2021.109501

Radiation Physics and Chemistry

2021

DOI: 10.1016/j.radphyschem.2021.109501

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Microwave photoconductance decay measurements of n- and p-type silicon irradiated with neutrons and protons

Hani Baek

Gihyun Kwon

Ji-Hyun Nam

et al.

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2023

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Cited by 3 publications

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Introduction Rates of Electrically Active Radiation Defects in Proton Irradiated n-Type and p-Type Si Monocrystals

Harutyunyan,

Sahakyan,

Manukyan

et al. 2023

J. Electron. Mater.

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Microwave photoconductance decay measurements of n- and p-type silicon irradiated with neutrons and protons

Cited by 3 publications

References 18 publications

Introduction Rates of Electrically Active Radiation Defects in Proton Irradiated n-Type and p-Type Si Monocrystals

Introduction Rates of Electrically Active Radiation Defects in Proton Irradiated n-Type and p-Type Si Monocrystals

Femtosecond nonlinear optical response and minority carrier lifetime of F4TCNQ-doped bismuthene for optoelectronic and ultrafast photonic applications

Electrical characteristics and deep-level transient spectroscopy of a fast-neutron-irradiated 4H–SiC Schottky barrier diode

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