Microwave Performance of Dual-Gate Cascode MESFET and HEMT Devices with High Gain at Low Noise Levels

Wenger, J.; Narozny, P.; Dambkes, H.; Splettstober, J.; Werres, C.

doi:10.1109/euma.1991.336366

Cited by 3 publications

(1 citation statement)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Furthermore, dual-gate cascode-devices were used to suppress impact ionization in InAIAs/InGaAs/InP HEMTs [13]. The advantages of DG HEMT MMICs as compared to single gate HEMT MMICs have been described elsewhere [7,[14][15]. Firstly, the DG designs offer an alternative for gain control plus high reverse isolation for DG cascode MMICs.…”

Section: Introductionmentioning

confidence: 99%

The effect of elevated temperature lifetest on low frequency noise performance in GaAs PHEMT dual gate MMICs [LNA example]

Chou

Callejo

Bledenbander

et al. 2004

JEDEC (Formerly the GaAs REL Workshop) ROCS Workshop, 2004.

View full text Add to dashboard Cite

The dual gate layout configuration has become a versatile approach for compact and high performance MMIC design for commercial, and milita~y/space applications. In this paper, we describe a method that was developed to lifetest compact (0.81 mm') dual gate GaAs P H E W low noise amplifiers (LNAs) operating from DC to 1 GHz. The objective of the lifetest is to evaluate the effect of elevated temperature on low frequency noise performance from 10-40 MHz. The results exhibit a decrease of noise figure (NF) at 10-40 MHz (approximately 0.25 to 0.5 dB) in a dual gate LNA subjected to lifetest at Tof 200°C. This might be attributed to the gate leakage current reduction at either the interface of gate metal-AIGaAs or nitrideAIGaAs, thus possibly reducing the effect of generation-recombination (primary origin of low frequency noise). On the other hand, the change of noise figure at frequency beyond 100 MHZ is not noticeable. In summary, we have demonstrated a method to effectively lifetest a compact and high performance MMIC designed with a dual gate configuration.

show abstract

Section: Introductionmentioning

confidence: 99%