Abstract:A new equivalent circuit model for 3D multilayer on-chip inductors based on physical principles is presented in this article. The model consists of multiple elementary cells, and every cell in the distributed model represents a single stacked inductor. The model also takes into account the distributed effect of the via-hole with feedline which is used to connect the test pad to the lowest mental layer. A parameter-extraction approach for proposed model which combines the analytical approach and empirical optim… Show more
“…The value of C dd can be determined using the procedure as follows . Setting initial value of C dd .Calculating the error as a function of the reflection coefficient at port 2: where is the error function criterion, superscript s denotes the simulated S‐parameter, m denotes the measured S ‐parameter, and i = (0… N−1) is the number of sampling points .If ε > ε 0 (ε 0 is the error target, normally 0.1%), the value of C dd needs to be updated to reduce ε.If ε < ε 0 is achieved, the value of C dd can be confirmed.…”
Section: Parameter Extractionmentioning
confidence: 99%
“…An accurate model parameter extraction technique of UTC‐PD is important for understanding of the device physical mechanisms and improving the device performances . Development of the equivalent circuit models of UTC‐PDs is also essential as it allows the existing well‐developed circuit simulation software to be utilized in the design and analysis of optoelectronic circuits .…”
Section: Introductionmentioning
confidence: 99%
“…The accuracy of the results depends greatly on the parameters of the equivalent circuit model, thus a good equivalent circuit model is not merely helpful for prediction of the performances of devices but also important for extracting model parameters conveniently and accurately . Numerical optimization techniques are usually used to determine the optimal values of model parameters .…”
Section: Introductionmentioning
confidence: 99%
“…It is obtained by using optimization method. The results obtained from analytical method are taken as an initial value for the subsequent fitting and optimization procedure, leading to the final results of all the parameters of the equivalent circuit model . The semi‐analytical method combines the advantages of the analytical and numerical optimization methods, to enable the extracted results more accurate.…”
“…The value of C dd can be determined using the procedure as follows . Setting initial value of C dd .Calculating the error as a function of the reflection coefficient at port 2: where is the error function criterion, superscript s denotes the simulated S‐parameter, m denotes the measured S ‐parameter, and i = (0… N−1) is the number of sampling points .If ε > ε 0 (ε 0 is the error target, normally 0.1%), the value of C dd needs to be updated to reduce ε.If ε < ε 0 is achieved, the value of C dd can be confirmed.…”
Section: Parameter Extractionmentioning
confidence: 99%
“…An accurate model parameter extraction technique of UTC‐PD is important for understanding of the device physical mechanisms and improving the device performances . Development of the equivalent circuit models of UTC‐PDs is also essential as it allows the existing well‐developed circuit simulation software to be utilized in the design and analysis of optoelectronic circuits .…”
Section: Introductionmentioning
confidence: 99%
“…The accuracy of the results depends greatly on the parameters of the equivalent circuit model, thus a good equivalent circuit model is not merely helpful for prediction of the performances of devices but also important for extracting model parameters conveniently and accurately . Numerical optimization techniques are usually used to determine the optimal values of model parameters .…”
Section: Introductionmentioning
confidence: 99%
“…It is obtained by using optimization method. The results obtained from analytical method are taken as an initial value for the subsequent fitting and optimization procedure, leading to the final results of all the parameters of the equivalent circuit model . The semi‐analytical method combines the advantages of the analytical and numerical optimization methods, to enable the extracted results more accurate.…”
“…The network‐based extraction techniques are still challenging and need for further improvements due to the diversity of process technologies. By using open/short/through test structures, the parasitic capacitances and inductances can be determined directly . The intrinsic elements can be extracted after de‐embedding the parasitic.…”
RF modeling and equivalent circuit model parameter extraction for GaAs‐based on‐chip inductors are presented in this article. An improved model that takes into account of the substrate loss effects based on the S parameters on wafer measurement is proposed. The parameter extraction method combines the analytical expressions and the empirical optimization procedure, which does not require any additional test structures. The intrinsic elements determined by utilizing the analytical method are described as functions of the parasitic elements. After that, an advanced design system is used to optimize the parasitic parameters with very small dispersion of initial values. Good agreement is obtained between the simulated and measured data up to 50 GHz.
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