Microwave measurements of the pulsed photoconductivity and photoelectric effect

Новиков, Г. Ф.; Marinin, A. A.; Rabenok, E. V.

doi:10.1134/s0020441210020144

Cited by 20 publications

(10 citation statements)

References 5 publications

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“…15 The films synthesized using the pyrolysis of the aerosols of the aqueous solutions of TCC were deposited at 300 C and annealed at 250 and 350 C for 30 min. 18 The kinetics of the electron trapping processes was measured by the TRMC method 19 at room temperature in a 9 GHz band with the time resolution of 50 ns. This frequency band was selected to detect both the fast and the slow components of photoresponse up to 2 ls.…”

Section: Methodsmentioning

confidence: 99%

Effect of annealing on the loss kinetics of charge carriers in CdS films

Rabenok

Гапанович

Bocharova

et al. 2013

Journal of Renewable and Sustainable Energy

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Flow rate effect on surface morphology of Cu doped CdS thin film by spray pyrolysis technique AIP Conf. Swift heavy ion induced structural changes in CdS thin films possessing different microstructures: A comparative studyThe influence of the annealing treatment on the kinetics of the electron trapping processes in CdS thin films has been investigated using the contactless time-resolved microwave photoconductivity technique (TRMC) in 9 GHz band. The thin (<200 nm) CdS films were synthesized using two techniques: by the chemical deposition from the solution (CBD method) and by the pyrolysis of the aerosols of the aqueous solutions of the thiourea coordination compounds of cadmium (Cd(thio) 2 Cl 2 ) on a heated substrate. Annealing in both the air and the nitrogen atmospheres resulted in an increase of the amplitude and characteristic decay time of the photoresponse. Two particular effects caused by the annealing treatments were observed: the structural improvement and the energy redistribution of the electron traps. V C 2013 American Institute of Physics. [http://dx.

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Section: Methodsmentioning

confidence: 99%

Effect of annealing on the loss kinetics of charge carriers in CdS films

Rabenok

Гапанович

Bocharova

et al. 2013

Journal of Renewable and Sustainable Energy

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“…Электрические методы применимы в более общем случае. Одним из таких методов является метод время-разрешенной микроволновой фотопроводимости (FTRMC) [14]. Этот метод позволяет следить за изменением концентрации носителей тока в зоне проводимости.…”

Section: экспериментальная частьunclassified

“…Для определения времени жизни носи- телей тока применяли методику разделения вкладов в фотоотклик P( f , t) сдвига резонансной частоты, δ f 0 , и изменения нагруженной добротности, Q, резонатора. Для этого анализировали зависимости фотоотклика P( f , t) от частоты СВЧ-генератора ( f ) в разные моменты времени (t) [14,15]. Фотопроводимость возбуждали азотным лазером ЛГИ-505 (длина волны λ = 337 нм, длительность импульса 8 нс).…”

Section: экспериментальная частьunclassified

“…С течением времени, прошедшего после импульса возбуждения, форма частотной зависимости меняется, при этом изменяется расположение точек f 0 1 и f 0 2 на оси частот, соответствующих значениям P = 0 слева и справа от значения f 0 (пунктирная линия на графиках): кривая становится более симметричной. Это свидетельствует о том, что вклад сдвига резонансной частоты в фотоотклик отрицательный, заметный в начальный момент времени и постепенно снижающийся и становящийся пренебрежимо малым в сравнении с вкладом в фотоотклик изменения добротности резонатора [14,15].…”

Section: кинетика гибели фотогенерированных носителей токаunclassified

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Влияние Содержания Меди На Кинетику Микроволновой Фотопроводимости Твердых Растворов CIGS

Новиков¹,

Rabenok²,

Orishina³

et al. 2019

Физика И Техника Полупроводников

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The kinetics of the photoresponse of microwave photoconductivity (9 GHz, TE_101-type cavity) on excitation by laser light pulses with a wavelength of 337 nm and a duration of 8 ns in copper-deficient Cu_1 –_ x (In_0.7Ga_0.3)Se_2 (CIGS) (0 < x ≤ 0.4) solid solutions with the chalcopyrite structure is investigated in a wide light intensity range. With an increase in the laser radiation density to ~5 × 10^14 photon/cm^2 per pulse, the photoresponse acquires, along with the previously revealed skin effect, the effect of the filling of traps created by V _Cu vacancies and Cu^+2 · V _Cu defect associates, the concentration of which increases with a decrease in x in the CIGS formula.

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“…μ‐PCD measurement [ 11 ] is widely used in semiconductor industry to study the impurity concentration in silicon wafers [ 12 ] or nonsilicon semiconductors such as CdTe. [ 13 ] This contactless method enables manufacturers to determine impurity concentrations with great accuracy and researchers to gain information on charge carrier dynamics on the nanosecond timescale.…”

Section: Introductionmentioning

confidence: 99%

Optical–Microwave Pump–Probe Studies of Electronic Properties in Novel Materials

Kollarics

Bojtor

Koltai

et al. 2020

Physica Status Solidi (b)

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Combined microwave–optical pump–probe methods are emerging to study the quantum state of spin qubit centers and the charge dynamics in semiconductors. A major hindrance is the limited bandwidth of microwave irradiation/detection circuitry which can be overcome with the use of broadband coplanar waveguides (CPWs). The development and performance characterization of two spectrometers is presented as follows: an optically detected magnetic resonance spectrometer (ODMR) and a microwave‐detected photoconductivity measurement. In the first method, light serves as detection and microwaves excite the investigated medium, whereas in the second, the roles are interchanged. The performance is demonstrated by measuring ODMR maps on the nitrogen‐vacancy (NV) center in diamond and time‐resolved photoconductivity in p‐doped silicon. The results demonstrate both an efficient coupling of the microwave irradiation to the samples as well as an excellent sensitivity for minute changes in sample conductivity.

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Microwave measurements of the pulsed photoconductivity and photoelectric effect

Cited by 20 publications

References 5 publications

Effect of annealing on the loss kinetics of charge carriers in CdS films

Effect of annealing on the loss kinetics of charge carriers in CdS films

Влияние Содержания Меди На Кинетику Микроволновой Фотопроводимости Твердых Растворов CIGS

Optical–Microwave Pump–Probe Studies of Electronic Properties in Novel Materials

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