Microwave generation from avalanching varactor diodes

Brand, F.A.; Higgins, V.J.; Baranowski, Joseph J.; Druesne, M.A.

doi:10.1109/proc.1965.4225

Cited by 9 publications

(1 citation statement)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…see [34]). Later, the devices (oscillators) based on the phenomenon of microwave frequencies generation were realized in Si and GaAs diodes [35,36]. The IMPATT diodes have received much attention in recent years as cost-effective and low-sized THz sources.…”

Section: Brief History Of Thz Technologiesmentioning

confidence: 99%

Brief history of THz and IR technologies

Sizov¹

2019

Semicond. Phys. Quantum Electron. and Optoelectron.

View full text Add to dashboard Cite

Brief history of terahertz (THz) and infrared (IR) science and technology, for learning lessons by historical evolution is presented and discussed identifying important (from Author's point of view) steps for their development. THz still is the not well-known region of electromagnetic science, even it has been lightened by starting of scientific and technological knowledge, since the end of 19 th century. As concerning history of IR science and technology, it took many years since 1800 (W. Hershel) to reach the level of use that is recognized today. The link between IR and thermal science and applications was so strong that IR was for a long time synonymous of thermography. THz science and technology are showing a rapid growth. IR and, especially THz technologies, now have become one of the major fields of applied research. Nowadays, they become widely spread in their use in astrophysics, security, biomedicine, detection of hidden objects, food and art inspection, etc. The increasing requirements for fast transmission of large amounts of data will lead to the extension of operation frequencies in communications toward the THz frequency range. IR and THz medical imaging can provide guidance for surgeons in delimiting the tumor margins, help clinicians visualize diseased area, etc. A few decades ago, IR technologies were mainly the domain of military ones. In recent two decades, due to widespread of lowcost thermal uncooled arrays there were realized many IR technology advances in civil and military applications. A large amount of THz technologies mass-market applications can't be highlighted, as these technologies do not meet yet the user requirements, especially in easiness of use and costs. Still, many of THz applications that we have now are emerging and showing their applicability in some implementations, where other methods can't give any comprehensive information, e.g., in dry food inspection for dielectric inclusions, skin tumour margins control, THz astronomy, package and envelope inspection, etc. The brief lessons given by historical highlights in THz and IR science and applications can be important for the future developments in these directions as history frequently opens routes for new thinking. In this brief review, the missed important steps can happen. Author apologizes for these possible faults.

show abstract

Section: Brief History Of Thz Technologiesmentioning

confidence: 99%

Brief history of THz and IR technologies

Sizov¹

2019

Semicond. Phys. Quantum Electron. and Optoelectron.

View full text Add to dashboard Cite

show abstract

A High Power Gaas Schottky Barrier Impatt Diode in 30GHZ Band

Migitaka

Nakamura

Saito

et al. 1973

3rd European Microwave Conference, 1973

View full text Add to dashboard Cite

INTRODUCTIONShortly after the first observation of microwave oscillation from Si IMPATT diodesl), F. A. Brand et al.2) and J. C. Iyvin3) found the same phenomena on GaAs diodes. Subsequently, L. D. Armstrong4 succeeded in CW operation of p n GaAs IMPATT diodes and found that they operated with high efficiency and low noise. However, the thermal conductivity of GaAs is about one third of that of Si, so that the p+n diode structure has apparently a disadvantage fo heat dissipation. In order to reduce the thermal resistance, C. K. Kim et al.5) made Shottky metal-n-n+ diodes and succeeded in obtaining high power, high efficiency oscillation. The best results reported to date are 4.5 W at 5.5GHz with an efficiency of 13 %6) and 2.1 W at 9.2 A9z with an efficiency of 9 %7).As for the noise of the diode, P. A. Levine et al.obtained an AM noise of -140 dB at C-band with a p+n IMPATT diode. These results are superior to those of conventional Si IMPATT diodes, and GaAs are expected to be capable of a higher efficiency, lower noise microwave source.The present paper discusses the method to obtain high efficiency, high power IMPATT diodes in 30 GHz band using a GaAs Schottky barrier. For the IMPATT diodes in 30 GHz band, a thin high-quality GaAs epitaxial layer is required. In the experiment, Sn-doped epitaxial layers were grown on Sn-doped substrates by the liquid phase epitaxy. In order to form a Schottky barrier, Pt, Mo and Au were successively evaporated on the chemically etched surface of the epitaxial layer. The lower electrode to the diode was made by plating copper on the evaporated Pt-Mo-Au Schottky metal and was used as a heat sink (IHS diode). By this method, the thermal resistance was reduced to close to the theoretical value. In ordpr to increase the reliability of the diode, a quartz stud was fixed near the diode and an Au-wire was bonded on both the stud and the upper electrode of the diode (stud diode). On the diode without the stud, the maximum power and efficiency obtained were 840 mW and 13.5 %, while on the diode with the stud, 735 mW and 12.4 % were obtained.The temperature dependence of the diode characteristics was also investigated and the temperature dependence of the oscillation frequency was found to be small as -100 --200 kHz/0C, which was theoretically well understood. DESIGN CONSIDERATIONAccording to the computer simulation on GaAs IMPATT diodes9) , the thickness of the n-layer is determined by the Read condition. The electron concentration of the n-layer is determined so as to operate the diode under the just-punch-through condition at the steady state. When it is assumed that the junction temperature is 2000C and the electron saturation velocity is ACKNOWLEDGEMENTSThe authors wish to thank H

show abstract

Invited: Potential applications and the noise problem in the reade avalanche diode

Hines

1966

1966 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

View full text Add to dashboard Cite

Microwave generation from avalanching varactor diodes

Cited by 9 publications

References 2 publications

Brief history of THz and IR technologies

Brief history of THz and IR technologies

A High Power Gaas Schottky Barrier Impatt Diode in 30GHZ Band

Invited: Potential applications and the noise problem in the reade avalanche diode

Contact Info

Product

Resources

About