Microwave field-effect transistors from sulphur-implanted GaAs

Kellner, W.; Kniepkamp, Hermann; Ristow, D.; Heinzle, M.; Boroffka, H.

doi:10.1016/0038-1101(77)90141-1

Cited by 8 publications

(2 citation statements)

References 18 publications

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“…This consideration, among others, has conducted some authors to adopt "wet" chemical deposition methods for the metallization of semiconductor devices. If electroplating has only found a few applications for gold plating of transistor headers (2) or for the realization of ohmic contacts on p-InP (3,4), the electroless deposition method, because it does not require a rear side electrical contact, appears to be much more attractive. A number of applications, using Okinaka's gold deposition bath, have been reported, like beam lead plating in S.I.C.…”

Section: E Haroutiounian and J P Sondinomentioning

confidence: 99%

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Plasma Deposited Silicon Nitride for Gallium Arsenide Encapsulation

Valco

Kapoor

1987

J. Electrochem. Soc.

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The composition and annealing characteristics of plasma deposited silicon nitride encapsulating films on ion implanted gallium arsenide have been investigated. X-ray photoelectron spectroscopy was employed to study the surface of the semi-insulating GaAs substrates after cleaning in organic solvents, and HCt, HF, and NH4OH solutions prior to encapsulation. The composition of silicon nitride films deposited with 30 kHz RF excitation was determined through Auger electron spectroscopy and infrared spectroscopy as a function of the deposition conditions. Most of the films had a silicon to nitrogen ratio between 0.71 and 0.76 and a hydrogen concentration between 10 and 19%. GaAs substrates implanted with silicon at 100 keV to a dose of 5 • 1012 cm -2 and annealed at 800~ had peak electron concentrations of 1.7 • 1017 cm -3 at a depth of 0.1 ~m. High frequency encapsulated GaAs substrates implanted at 100 keV to a dose of 5 • 101~ cm -2 and 150 keV to a dose of 3 • 1012 cm -~ had peak electron concentrations of 1.7 • 1017 cm -3 and 9.6 • 101G cm 3 at depths of 0.1 and 0.12 ~tm, respectively. A Schottky-gate field effect transistor with a 3 ~m gate length which was fabricated using the silicon nitride encapsulant had a transconductance of 30 mS/ram.

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Section: E Haroutiounian and J P Sondinomentioning

confidence: 99%

“…The use of ion implantation for the formation of active layers in gallium arsenide (GaAs) devices has been frequently reported in recent years (1)(2)(3). In addition to providing excellent control of the active layer thickness and doping density, it allows the use of a self-aligned fabrication technology.…”

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confidence: 99%