2000
DOI: 10.1016/s0924-4247(00)00373-3
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Microwave enhanced fast anisotropic etching of monocrystalline silicon

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Cited by 31 publications
(27 citation statements)
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“…The fact that the non-ionizing radiation (NIR) such as EMF and mechanical vibration could modulate the water molecule dissociation and hydrogen peroxide (H 2 O 2 ) formation in it can be considered as well documented (Klassen 1982;Dziuban 2003;Walczak and Dziuban 2004;Domrachev et al 1996). As the H 2 O 2 is a strong modulator of cell metabolism, it was suggested to be one of the messengers through which the biological effects of NIR are realized.…”
mentioning
confidence: 99%
“…The fact that the non-ionizing radiation (NIR) such as EMF and mechanical vibration could modulate the water molecule dissociation and hydrogen peroxide (H 2 O 2 ) formation in it can be considered as well documented (Klassen 1982;Dziuban 2003;Walczak and Dziuban 2004;Domrachev et al 1996). As the H 2 O 2 is a strong modulator of cell metabolism, it was suggested to be one of the messengers through which the biological effects of NIR are realized.…”
mentioning
confidence: 99%
“…Previously 183°C, 3.7 MPt, SEM image obtained effective ansiotropic etching of silicon in deionised water [8] showed that x5000. water became very aggressive fluid able to etch silicon (Fig.…”
Section: Etching Of Silicon In Deionised Watermentioning
confidence: 99%
“…shortened 9 times in comparison to standard process from 6 hours to 40 65 TP.IC]minutes (V1009 imImin, 80°C, 7M KOH)(Fig. 4a)[10]. ArduousFig.…”
mentioning
confidence: 96%
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“…redoxsystem or complexants, oxidizing agent, surfactants, and metal impurities) [13][14][15][16][17] are Open Access *Correspondence: prem@iith.ac.in MEMS and Micro/Nano Systems Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, India added into KOH to get high speed etching and the alcohols/surfactants are incorporated to improve the surface morphology [18][19][20][21][22][23][24]. Moreover, etching at the boiling point of the etchant [11,25], microwave irradiation of the etchant [26], ultrasonic agitation of the etchant [27] have been employed to increase the etch rate. The ultrasonic method may rupture the fragile structures and microwave irradiation technique causes irradiation damage to the structures.…”
Section: Introductionmentioning
confidence: 99%