1,500°C−sintered MgTa 2 O 6 ceramic exhibits microwave dielectric characteristics of e r =30.5, Q×f= 56,900 GHz, and t f =28.3 ppm/°C, whereas 1,400°C-sintered MgNb 2 O 6 ceramic exhibits microwave dielectric characteristics of e r =21.7, Q×f=89,900 GHz, and t f = −68.5 ppm/°C. In order to find the dielectric resonators with t f value close to 0 ppm/°C, the effects of sintering condition and composition on the microwave dielectric characteristics of Mg(Ta 1−x Nb x ) 2 O 6 ceramics (0.25≦x≦ 0.35) prepared under sintering temperature of 1,300-1,450°C are investigated. The results show that as the sintering temperature increases from 1,300 to 1,450°C, the e r , Q×f and t f values of Mg(Ta 1−x Nb x ) 2 O 6 ceramics all increase and saturate at 1,450°C. On the other hand, as the Nb 2 O 5 content decreases, the t f values of Mg(Ta 1−x Nb x ) 2 O 6 ceramics will shift to near 0 ppm/°C. The optimized sintering conditions and composition to obtain the Mg(Ta 1−x Nb x ) 2 O 6 dielectrics with t f close to 0 ppm/°C are sintering temperature of 1,450°C, sintering duration of 4 h, and composition of x=0.25, which exhibits the microwave dielectric characteristics of e r =27.9, Q×f=33,100 GHz, and t f =−0.7 ppm/°C.