Microwave Dielectric Properties of Antiferroelectric Lead Zirconate

Abstract

The dielectric properties of ceramic lead zirconate and rutile are presented at microwave frequencies. Several techniques are required to span the frequency range from 100 Hz to 26 GHz, and rutile is utilized as a reference material to determine the consistency between measurement methods. A significant relaxation was seen for lead zirconate. At 10 GHz, the dielectric constant decreased 20% from the 1-MHz value of 160, and the dielectric loss increased by more than 3 times the lowfrequency value of 0.007.authors.'&'' One feature of the reviewed literature is the large variation of dielectric constants reported at room temperature (dielectric constants range from 62 to 110 at 1 MHz). This discrepancy gives strong evidence that consistent processing of PZ is difficult. In this study, the range of dielectric constant values between samples is 14%.

Effects of Vibro-Milling Time and Calcination on Phase Formation and Particle Size of Lead Zirconate Nanopowders

“…However, there is evidence that, minor amount of the unreacted PbO phase tends to coexist along with the PZ phase, agreed with earlier works [10,11]. The appearance of PbO phase indicated that full crystallization has not occurred at relatively lower firing temperature.…”

“…The experimental work carried out here suggests that the optimal combination of the milling time and calcination condition for the production of single-phase PbZrO 3 nanopowders is 30 h and 800 • C for 1 h with heating/cooling rates of 30 • C/min, respectively. Moreover, the employed heating/cooling rates for PbZrO 3 powders observed in this work are also faster than those reported earlier [9][10][11].…”

Structural, electronic and optical properties of lead zirconate

“…The dielectric properties of lead zirconate were investigated at microwave frequencies. A significant relaxation was seen for lead zirconate near microwave frequencies [6].…”

Electric field-tunable BaxSr1−xTiO3 films with high figures of merit grown by molecular beam epitaxy

“…The best reported BST film quality factors (Q ¼ 1=tan d, where tan d is the dielectric loss tangent) are no greater than $200, [9][10][11][12][13][14] which is an order of magnitude below Q of $10 3 of bulk BST. 5 Furthermore, films with high tunability tend to have high losses, 9,10 which results in low figures of merit. 15 Low dielectric losses have been achieved for SrTiO 3 films (Q $ 300), 16 but the room temperature tunability of SrTiO 3 is low.…”

“…Low losses have been demonstrated for bulk BST ceramics and single crystals. [4][5][6][7][8] Thin film parallel-plate capacitor structures with metal bottom electrodes allow for the application of high fields for high tunabilities. BST films have been grown by pulsed laser deposition, sputtering, metal-organic vapor deposition, and solution methods.…”