Microwave dielectric properties and low temperature sintering behavior of Li2CoTi3O8 ceramic

Fabrication of nanopowders by high energy ball milling and low temperature sintering of Mg2SiO4 microwave dielectrics

“…These applications demand microwave substrate materials with high quality factor (Q × f) to achieve high selectivity, low dielectric constant (ε r ) to reduce the delay time of electronic signal, and nearly zero temperature coefficient of resonant frequency ( f ) for frequency stability. Promising candidates include as Mg 2 SiO 4 (Q × f = 40,000-240,000 GHz, ε r = 6-7, f = −60 ppm/ • C) [1,2], Al 2 O 3 (Q × f = 680,000 GHz, ε r = 10, [3,19], Mg 2 SnO 4 (Q × f = 55,100 GHz, ε r = 8.41, f = −62 ppm/ • C) [11], Ba(Zn 1/3 Ta 2/3 )O 3 (Q × f = 120 THz) [23], Li 2 MgTi 3 O 8 (Q × f = 36,200 GHz, ε r = 26, f = −2 ppm/ • C) [24] and other microwave dielectrics materials [25][26][27][28][29][30][31][32][33]. Among these materials, forsterite Mg 2 SiO 4 has attracted a great attention with low dielectric constant and loss tangent.…”

Effect of H3BO3 on the low temperature sintering and microwave dielectric properties of Li2ZnTi3O8 ceramics

“…However, the reduction of sintering temperature of an original ceramic is usually accompanied by an abrupt degradation of the dielectric properties [3]. Therefore, there is a considerable interest in the search of new dielectric materials with low sintering temperature [7][8][9].…”

A new temperature stable microwave dielectric ceramics: ZnTiNb2O8 sintered at low temperatures

“…It is well known that BaCu(B 2 O 5 ) (BCB) decreases the sintering temperature of many materials, such as Li 2 3 . These materials showed good microwave dielectric properties [24][25][26][27][28].…”