Microwave-assisted transport through a quantum dot

McEuen, Paul L.; Kouwenhoven, L. P.; Jauhar, S.; Orenstein, J.; McCormick, K.; Dixon, D.; Nazarov, Yu. V.; Vaart, N.C. van der; Foxon, C.T.

doi:10.1088/0957-4484/7/4/018

Cited by 5 publications

(10 citation statements)

References 7 publications

(7 reference statements)

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“…For V BG ¼ À7 V, the current oscillations persist up to 120 K, whereas for V BG ¼ 1.5 V the oscillations persist up to 250 K. This shows that with increasing V BG , the operating temperature increases, consistent with Figures 3 and 4, where we observed a larger charging energy with increasing V BG . We can also estimate the charging energy of the quantum dot from the temperature dependent data using the formula, U c ¼ 4K B T. 47,48 For T ¼ 250 K, U c ¼ 86 meV which is close to the charging energy obtained from the stability plot.…”

Section: Resultssupporting

confidence: 60%

Low temperature electron transport spectroscopy of mechanically templated carbon nanotube single electron transistors

Stokes

Islam

Khondaker

2013

Journal of Applied Physics

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We report electronic transport investigations of mechanically templated carbon nanotube single electron transistors (SETs). The devices were fabricated on a Si/SiO 2 substrate by controllably placing individual single walled carbon nanotubes (SWNTs) between the source and drain electrodes via dielectrophoresis with a 100 nm wide local Al/Al 2 O 3 bottom gate in the middle. From the low temperature electronic transport measurements, we show that a quantum dot is formed whose charging energy can be tuned from 10 to 90 meV by varying both the local gate and Si backgate. The temperature dependent measurements show that the Coulomb oscillations persist up to 250 K. The transport properties can be explained by a simple potential configuration, which suggests that two tunnel barriers are formed due to the bending of the SWNT at the local gate edges and that the size of the dot and tunnel barrier transparency can be tuned by the gates allowing the operation of SET in a wide temperature range and thereby realizing a controllable and tunable SET. Our simple fabrication technique and its tunability over a large temperature range could facilitate large scale fabrication of SET for practical applications. V C 2013 AIP Publishing LLC.

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Section: Resultssupporting

confidence: 60%

Low temperature electron transport spectroscopy of mechanically templated carbon nanotube single electron transistors

Stokes

Islam

Khondaker

2013

Journal of Applied Physics

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“…On the other hand, the effects of MW are evident for finite intensity of applied electromagnetic radiation, suggesting that multi-photon processes occur in our experimental conditions. In the many-photon regime and for k B T > hω 0 , the microwave mode can be treated as a classical electromagnetic field that induces a broadening of the electrodes energy levels 23,24,26,27 . More specifically, the coupling with the microwave field induces an oscillating voltage of amplitude V S AC on the source lead.…”

Section: Discussionmentioning

confidence: 99%

“…When the photon energy hω matches the level spacing, coherent and/or resonant phenomena may occur and NW QDs may function either as single-atom maser sources [18][19][20] or as photon detectors in the MW range 21 . Non-resonant MW excitation may assist tunneling process thus affecting the charge transport characteristics, as observed on other semiconductor quantum well 22 and QD systems: effects of electromagnetic radiation on Coulomb blockade peaks were reported for electrostatically defined GaAs QDs [23][24][25] and single-walled carbon nanotubes 26,27 . The lifting of Coulomb blockade in the presence of MW radiation can be described in terms of photon-assisted tunneling (PAT) 28 that, in the quantum limit (hω > k B T ), gives rise to inelastic single-electron tunneling 29 .…”

Section: Introductionmentioning

confidence: 99%

Microwave-Assisted Tunneling in Hard-Wall InAs/InP Nanowire Quantum Dots

Cornia

Rossella

Demontis

et al. 2019

Sci Rep

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With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external stimuli intrinsically depend on their quantum properties. Here we investigate single-electron tunneling in hard-wall InAs/InP nanowires in the presence of an off-resonant microwave drive. Our heterostructured nanowires include InAs quantum dots (QDs) and exhibit different tunnel-current regimes. In particular, for source-drain bias up to few mV Coulomb diamonds spread with increasing contrast as a function of microwave power and present multiple current polarity reversals. This behavior can be modelled in terms of voltage fluctuations induced by the microwave field and presents features that depend on the interplay of the discrete energy levels that contribute to the tunneling process.

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“…Many interesting effects were found in quantum dot (QD) systems driven by external time-dependent forces like the turnstile effect, photon-assisted tunnelling (PAT), spin and charge quantum pumps, e.g. [1][2][3][4][5][6][7]. For periodically modulated quantum system a net number of charge can be transferred between unbiased electrodes.…”

Section: Introductionmentioning

confidence: 99%

Mono-parametric charge pumping through a quantum dot coupled with energy-gapped leads

Kwapiński

Taranko

2015

Eur. Phys. J. B

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Abstract. We present a proposal for a single-parametric electron pump composed of a quantum dot between two unbiased leads with energy-gapped electron density of states (DOS). The model tight-binding Hamiltonian and the evolution operator technique are used in the calculations. The quantum dot is driven by the external harmonic field which leads to the pumping current flowing from the left or right electrode depending on the system parameters. We show that the net pumping current appears in the system if (i) there are at least two sideband states: one of them lying below and the second lying above the Fermi energy; (ii) the left and right lead DOS in the vicinity of these sideband states are different. Moreover, the energy-gapped structure of DOS is visible on the average quantum dot charge and the pumped current curves as well as on the transconductance characteristics. Thus mono-parametric pumping provides useful information about the system parameters, in particular about the lead DOS structure.

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Microwave-assisted transport through a quantum dot

Cited by 5 publications

References 7 publications

Low temperature electron transport spectroscopy of mechanically templated carbon nanotube single electron transistors

Low temperature electron transport spectroscopy of mechanically templated carbon nanotube single electron transistors

Microwave-Assisted Tunneling in Hard-Wall InAs/InP Nanowire Quantum Dots

Mono-parametric charge pumping through a quantum dot coupled with energy-gapped leads

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