Microwave assisted synthesis of SnS nanosheets for fabrication of large area SnS/Si heterojunction

Review of Metal Sulfide Nanostructures and their Applications

“…363,364 SnS is amphoteric, which means it can conduct both p-type and n-type currents depending on the preparation conditions. 365,366 SnS, a chalcogenide material, attracted great attention for its potential industrial applications, such as photodetectors (photodiodes and photovoltaic), optoelectronic devices, solar cells, gas sensors, wastewater treatment, and biomedical. 367−371 Although cubicstructured SnS has been reported, 372,373 it usually has a layered orthorhombic structure that is kept together by van der Waals forces perpendicular to the c-axis.…”

“…Strong anisotropic optoelectronic and mechanical characteristics as well as dual indirect and direct band gaps are found in tin sulfide (SnS). The indirect and direct band gap energy of SnS varies from 1.07 to 1.25 eV and 1.30 to 1.39 eV, respectively. − It exhibits strong absorption coefficients (>104 cm –1 ) in the ultraviolet, visible, and NIR regions of the spectrum. , Furthermore, its essential elements are low-cost, abundant, and less harmful. , SnS is amphoteric, which means it can conduct both p-type and n-type currents depending on the preparation conditions. , SnS, a chalcogenide material, attracted great attention for its potential industrial applications, such as photodetectors (photodiodes and photovoltaic), optoelectronic devices, solar cells, gas sensors, wastewater treatment, and biomedical. − Although cubic-structured SnS has been reported, , it usually has a layered orthorhombic structure that is kept together by van der Waals forces perpendicular to the c -axis. In addition to being an effective layer for photovoltaic absorption, the layered structure of SnS that makes it possible for ions to intercalate more easily gives the material excellent electrochemical properties (e.g., Na + and Li + ) .…”

Preparation of a novel Bi9O7.5S6/SnS composite film with improved photoelectric properties

“…A comparison of the output performances of the related photoelectric detection devices has also been conducted (see Table S1†). Compared to typical two-dimensional photoelectronic devices, 29,30 the performance of the heterojunction device in this study is somewhat inferior, but still outperforms most SnS-based devices. 31,32…”

Solution Processed Photodetectors with PVK-WS2 Nanotube/Nanofullerene Organic–Inorganic Hybrid Films

“…In order to analyze the performance of the device more clearly, the photoresponsivity ( R ), the ratio of the photovoltage to the incident light power and the special detectivity ( D* ) representing the sensitivity of the photodetector are defined, respectively, as − where P is the incident light power, V ph is the photovoltage, V d is the dark voltage, A is the active area of the photodetector, and q is the electron charge. According to the above formula, the two most representative parameters are calculated.…”